Researcher profile

Masakazu Aono

Masakazu Aono contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2015arXiv

Decision Maker based on Atomic Switches

We propose a simple model for an atomic switch-based decision maker (ASDM), and show that, as long as its total volume of precipitated Ag atoms is conserved when coupled with suitable operations, an atomic switch system provides a sophisticated "decision-making" capability that is known to be one of the most important intellectual abilities in human beings. We considered the multi-armed bandit problem (MAB); the problem of finding, as accurately and quickly as possible, the most profitable option from a set of options that gives stochastic rewards. These decisions are made as dictated by each volume of precipitated Ag atoms, which is moved in a manner similar to the fluctuations of a rigid body in a tug-of-war game. The "tug-of-war (TOW) dynamics" of the ASDM exhibits higher efficiency than conventional MAB solvers. We show analytical calculations that validate the statistical reasons for the ASDM dynamics to produce such high performance, despite its simplicity. These results imply that various physical systems, in which some conservation law holds, can be used to implement efficient "decision-making objects." Efficient MAB solvers are useful for many practical applications, because MAB abstracts a variety of decision-making problems in real- world situations where an efficient trial-and-error is required. The proposed scheme will introduce a new physics-based analog computing paradigm, which will include such things as "intelligent nano devices" and "intelligent information networks" based on self-detection and self-judgment.

preprint2014arXiv

Benchtop Fabrication of Memristive Atomic Switch Networks

Recent advances in nanoscale science and technology provide possibilities to directly self-assemble and integrate functional circuit elements within the wiring scheme of devices with potentially unique architectures. Electroionic resistive switching circuits comprising highly interconnected fractal electrodes and metal-insulator-metal interfaces, known as atomic switch networks, have been fabricated using simple benchtop techniques including solution-phase electroless deposition. These devices are shown to activate through a bias-induced forming step that produces the frequency dependent, nonlinear hysteretic switching expected for gapless-type atomic switches and memristors. By eliminating the need for complex lithographic methods, such an approach toward device fabrication provides a more accessible platform for the study of ionic resistive switches and memristive systems.

preprint2011arXiv

Macroscopic Superconducting Current through a Silicon Surface Reconstruction with Indium Adatoms: Si(111)-(R7$\times$R3)-In

Macroscopic and robust supercurrents are observed by direct electron transport measurements on a silicon surface reconstruction with In adatoms (Si(111)-(R7xR3)-In). The superconducting transition manifests itself as an emergence of the zero resistance state below 2.8 K. $I-V$ characteristics exhibit sharp and hysteretic switching between superconducting and normal states with well-defined critical and retrapping currents. The two-dimensional (2D) critical current density $J_\mathrm{2D,c}$ is estimated to be as high as $1.8 \ \mathrm{A/m}$ at 1.8 K. The temperature dependence of $J_\mathrm{2D,c}$ indicates that the surface atomic steps play the role of strongly coupled Josephson junctions.