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Martin Gajek

Martin Gajek appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2020arXiv

Transformer Based Language Models for Similar Text Retrieval and Ranking

Most approaches for similar text retrieval and ranking with long natural language queries rely at some level on queries and responses having words in common with each other. Recent applications of transformer-based neural language models to text retrieval and ranking problems have been very promising, but still involve a two-step process in which result candidates are first obtained through bag-of-words-based approaches, and then reranked by a neural transformer. In this paper, we introduce novel approaches for effectively applying neural transformer models to similar text retrieval and ranking without an initial bag-of-words-based step. By eliminating the bag-of-words-based step, our approach is able to accurately retrieve and rank results even when they have no non-stopwords in common with the query. We accomplish this by using bidirectional encoder representations from transformers (BERT) to create vectorized representations of sentence-length texts, along with a vector nearest neighbor search index. We demonstrate both supervised and unsupervised means of using BERT to accomplish this task.

preprint2014arXiv

Low-Damage High-Throughput Grazing-Angle Sputter Deposition on Graphene

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.