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Martin Engler

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Published work

3 published item(s)

preprint2025arXiv

Search for Axionlike Dark Matter Using Liquid-State Nuclear Magnetic Resonance

We search for dark matter in the form of axionlike particles (ALPs) in the mass range $5.576741 \,\mathrm{neV/c^2}$ - $5.577733\,\mathrm{neV/c^2}$ by probing their possible coupling to fermion spins through the ALP field gradient. This is achieved by performing proton nuclear magnetic resonance spectroscopy on a sample of methanol as a technical demonstration of the Cosmic Axion Spin Precession Experiment Gradient (CASPEr-Gradient) Low-Field apparatus. Searching for spin-coupled ALP dark matter in this mass range with associated Compton frequencies in a 240 Hz window centered at 1.348570 MHz resulted in a sensitivity to the ALP-proton coupling constant of $g_{\mathrm{ap}} \approx 3 \times 10^{-2}\,\mathrm{GeV}^{-1}$. This narrow-bandwidth search serves as a proof-of-principle and a commissioning measurement, validating our methodology and demonstrating the experiment's capabilities. CASPEr-Gradient Low-Field will probe the mass range from $4.1\,\mathrm{\peV/c^2}$ to $17\,\mathrm{\neV/c^2}$ with hyperpolarized samples to boost the sensitivity beyond the astronomical limits.

preprint2016arXiv

Nano patterns self-aligned to Ga dimer rows on GaAs surfaces

Ion beam irradiation of semiconductors is a method to produce regular periodic nanoscale patterns self-organized on wafer scale. At low temperatures, the surface of semiconductors is typically amorphized by the ion beam. Above a material dependent dynamic recrystallization temperature however, the surface remains crystalline and ion beam irradiation produces regular arrays of faceted ripples on III-V semiconductors. This provides a powerful single-step technique for the production of nanostructures on a large area. On $(001)$ surfaces these ripples are parallel to the $[1\bar{1}0]$ direction without any external anisotropy. The origin of this self-alignment was not fully understood until now. A simple experiment exposing the front side and back side of a GaAs$(001)$ wafer to the ion beam clarifies its origin and proves that the ripples align to the Ga dimer rows. As the direction of Ga dimer rows rotates by 90° on the back side, the orientation of the ripples also rotates by 90° to $[110]$. We discuss the experimental results in view of a model where the pattern formation is driven by creation of vacancies and ad-atoms by the ion beam and their diffusion, which is linked to the direction of dimers on the surface.

preprint2012arXiv

Strong anisotropy in surface kinetic roughening: analysis and experiments

We report an experimental assessment of surface kinetic roughening properties that are anisotropic in space. Working for two specific instances of silicon surfaces irradiated by ion-beam sputtering under diverse conditions (with and without concurrent metallic impurity codeposition), we verify the predictions and consistency of a recently proposed scaling Ansatz for surface observables like the two-dimensional (2D) height Power Spectral Density (PSD). In contrast with other formulations, this Ansatz is naturally tailored to the study of two-dimensional surfaces, and allows to readily explore the implications of anisotropic scaling for other observables, such as real-space correlation functions and PSD functions for 1D profiles of the surface. Our results confirm that there are indeed actual experimental systems whose kinetic roughening is strongly anisotropic, as consistently described by this scaling analysis. In the light of our work, some types of experimental measurements are seen to be more affected by issues like finite space resolution effects, etc. that may hinder a clear-cut assessment of strongly anisotropic scaling in the present and other practical contexts.