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Markus Kantner

Markus Kantner contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2020arXiv

Beyond just "flattening the curve": Optimal control of epidemics with purely non-pharmaceutical interventions

When effective medical treatment and vaccination are not available, non-pharmaceutical interventions such as social distancing, home quarantine and far-reaching shutdown of public life are the only available strategies to prevent the spread of epidemics. Based on an extended SEIR (susceptible-exposed-infectious-recovered) model and continuous-time optimal control theory, we compute the optimal non-pharmaceutical intervention strategy for the case that a vaccine is never found and complete containment (eradication of the epidemic) is impossible. In this case, the optimal control must meet competing requirements: First, the minimization of disease-related deaths, and, second, the establishment of a sufficient degree of natural immunity at the end of the measures, in order to exclude a second wave. Moreover, the socio-economic costs of the intervention shall be kept at a minimum. The numerically computed optimal control strategy is a single-intervention scenario that goes beyond heuristically motivated interventions and simple "flattening of the curve." Careful analysis of the computed control strategy reveals, however, that the obtained solution is in fact a tightrope walk close to the stability boundary of the system, where socio-economic costs and the risk of a new outbreak must be constantly balanced against one another. The model system is calibrated to reproduce the initial exponential growth phase of the COVID-19 pandemic in Germany.

preprint2020arXiv

Consistency and convergence for a family of finite volume discretizations of the Fokker--Planck operator

We introduce a family of various finite volume discretization schemes for the Fokker--Planck operator, which are characterized by different weight functions on the edges. This family particularly includes the well-established Scharfetter--Gummel discretization as well as the recently developed square-root approximation (SQRA) scheme. We motivate this family of discretizations both from the numerical and the modeling point of view and provide a uniform consistency and error analysis. Our main results state that the convergence order primarily depends on the quality of the mesh and in second place on the quality of the weights. We show by numerical experiments that for small gradients the choice of the optimal representative of the discretization family is highly non-trivial while for large gradients the Scharfetter--Gummel scheme stands out compared to the others.

preprint2020arXiv

Non-isothermal Scharfetter-Gummel scheme for electro-thermal transport simulation in degenerate semiconductors

Electro-thermal transport phenomena in semiconductors are described by the non-isothermal drift-diffusion system. The equations take a remarkably simple form when assuming the Kelvin formula for the thermopower. We present a novel, non-isothermal generalization of the Scharfetter-Gummel finite volume discretization for degenerate semiconductors obeying Fermi-Dirac statistics, which preserves numerous structural properties of the continuous model on the discrete level. The approach is demonstrated by 2D simulations of a heterojunction bipolar transistor.

preprint2019arXiv

Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient

Many challenges faced in today's semiconductor devices are related to self-heating phenomena. The optimization of device designs can be assisted by numerical simulations using the non-isothermal drift-diffusion system, where the magnitude of the thermoelectric cross effects is controlled by the Seebeck coefficient. We show that the model equations take a remarkably simple form when assuming the so-called Kelvin formula for the Seebeck coefficient. The corresponding heat generation rate involves exactly the three classically known self-heating effects, namely Joule, recombination and Thomson-Peltier heating, without any further (transient) contributions. Moreover, the thermal driving force in the electrical current density expressions can be entirely absorbed in the diffusion coefficient via a generalized Einstein relation. The efficient numerical simulation relies on an accurate and robust discretization technique for the fluxes (finite volume Scharfetter-Gummel method), which allows to cope with the typically stiff solutions of the semiconductor device equations. We derive two non-isothermal generalizations of the Scharfetter-Gummel scheme for degenerate semiconductors (Fermi-Dirac statistics) obeying the Kelvin formula. The approaches differ in the treatment of degeneration effects: The first is based on an approximation of the discrete generalized Einstein relation implying a specifically modified thermal voltage, whereas the second scheme follows the conventionally used approach employing a modified electric field. We present a detailed analysis and comparison of both schemes, indicating a superior performance of the modified thermal voltage scheme.