Researcher profile

Marino Marsi

Marino Marsi contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2019arXiv

Photoinduced renormalization of Dirac states in BaNiS$_2$

By means of pump-probe time- and angle-resolved photoelectron spectroscopy, we provide evidence of a sizeable reduction of the Fermi velocity of out-of-equilibrium Dirac bands in the quasi-two-dimensional semimetal BaNiS$_2$. First-principle calculations indicate that this band renormalization is ascribed to a change in non-local electron correlations driven by a photo-induced enhancement of screening properties. This effect is accompanied by a slowing down of the Dirac fermions and by a non-rigid shift of the bands at the center of the Brillouin zone. This result suggests that other similar electronic structure renormalizations may be photoinduced in other materials in presence of strong non-local correlations.

preprint2016arXiv

Stable topological insulators achieved using high energy electron beams

Topological insulators are transformative quantum solids with immune-to-disorder metallic surface states having Dirac band structure. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to surface charge transport. Here we demonstrate that irradiation with swift ($\sim 2.5$ MeV energy) electron beams allows to compensate these defects, bring the Fermi level back into the bulk gap, and reach the charge neutrality point (CNP). Controlling the beam fluence we tune bulk conductivity from \textit{p}- (hole-like) to \textit{n}-type (electron-like), crossing the Dirac point and back, while preserving the Dirac energy dispersion. The CNP conductance has a two-dimensional (2D) character on the order of ten conductance quanta $G_0 =e^2/h$, and reveals, both in Bi$_2$Te$_3$ and Bi$_2$Se$_3$, the presence of only two quantum channels corresponding to two topological surfaces. The intrinsic quantum transport of the topological states is accessible disregarding the bulk size.