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Source author record

Marcos G. Menezes

Marcos G. Menezes appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

6 published item(s)

preprint2015arXiv

Electronic and structural properties of vacancies and hydrogen adsorbates on trilayer graphene

Using ab initio calculations, we study the electronic and structural properties of vacancies and hydrogen adsorbates on trilayer graphene. Those defects are found to share similar low-energy electronic features, since they both remove a pz electron from the honeycomb lattice and induce a defect level near the Fermi energy. However, a vacancy also leaves unpaired $σ$ electrons on the lattice, which lead to important structural differences and also contribute to magnetism. We explore both ABA and ABC stackings and compare properties such as formation energies, magnetic moments, spin density and the local density of states (LDOS) of the defect levels. These properties show a strong sensitivity to the layer in which the defect is placed and smaller sensitivities to sublattice placing and stacking type. Finally, for the ABC trilayer, we also study how these states behave in the presence of an external field, which opens a tunable gap in the band structure of the non-defective system. The pz defect states show a strong hybridization with band states as the field increases, with reduction and eventually loss of magnetization, and a non-magnetic, midgap-like state is found when the defect is at the middle layer.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Ab initio quasiparticle bandstructure of ABA and ABC-stacked graphene trilayers

We obtain the quasiparticle band structure of ABA and ABC-stacked graphene trilayers through ab initio density functional theory (DFT) and many-body quasiparticle calculations within the GW approximation. To interpret our results, we fit the DFT and GW $π$ bands to a low energy tight-binding model, which is found to reproduce very well the observed features near the K point. The values of the extracted hopping parameters are reported and compared with available theoretical and experimental data. For both stackings, the self energy corrections lead to a renormalization of the Fermi velocity, an effect also observed in previous calculations on monolayer graphene. They also increase the separation between the higher energy bands, which is proportional to the nearest neighbor interlayer hopping parameter $γ_1$. Both features are brought to closer agreement with experiment through the self energy corrections. Finally, other effects, such as trigonal warping, electron-hole asymmetry and energy gaps are discussed in terms of the associated parameters.

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preprint2012arXiv

Half-metallicity induced by charge injection in hexagonal boron nitride clusters embedded in graphene

We study the electronic structure and magnetic properties of h-BN triangular clusters embedded in graphene supercells. We find that, depending on the sizes of the clusters and the graphene separation region between them, spin polarization can be induced through charge doping or can be observed even in the neutral state. For these cases, half-metallicity is observed for certain charged states, which are otherwise metallic. In these half-metallic states, the spin density is concentrated near the edges of the clusters, in analogy to the more common predictions for half-metals in zigzag graphene nanoribbons and h-BN/graphene intercalated nanoribbons. Since experimental realizations of h-BN domains in graphene have already been reported, these heterostructures can be suitable candidates for nanoelectronics and spintronics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Comment on "Wave-scattering formalism for thermal conductance in thin wires with surface disorder"

In their calculations based on the Landauer transport equation, Akguc and Gong [Phys. Rev. B 80, 195408 (2009)] obtained an expression for the heat conductance of a quantum wire valid in the ballistic regime and in the limit of vanishing temperature difference between reservoirs. Their result appears to be different from the one reported in the previous paper of Rego and Kirczenow [Phys. Rev. Lett. 81, 232 (1998)], which led them to argue that their new result was the correct one. We show here that, in fact, both results are correct since different definitions for the dilogarithm function were used in those papers. Hence, comparisons between these two results should be done with care.

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preprint2010arXiv

Gap Opening by Asymmetric Doping in Graphene Bilayers

We study the energy gap opening in the electronic spectrum of graphene bilayers caused by asym- metric doping. Both substitutional impurities (boron acceptors and nitrogen donors) and adsorbed potassium donors are considered. The gap evolution with dopant concentration is compared to the situation in which the asymmetry between the layers is induced by an external electric field. The effects of adsorbed potassium are similar to that of an electric field, but substitutional impurities behave quite differently, showing smaller band gaps and a large sensitivity to disorder and sublattice occupation.

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preprint2010arXiv

Proposal for a single-molecule field-effect transistor for phonons

We propose a practical realization of a field-effect transistor for phonons. Our device is based on a single ionic polymeric molecule and it gives modulations as large as -25% in the thermal conductance for feasible temperatures and electric field magnitudes. Such effect can be achieved by reversibly switching the acoustic torsion mode into an optical mode through the coupling of an applied electric field to the dipole moments of the monomers. This device can pave the way to the future development of phononics at the nanoscale or molecular scale.

0 citations0 reviewsNo code linkedOpen access