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Mao-Sheng Miao

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cond-mat.mtrl-sci physics.chem-ph physics.comp-ph cond-mat.other physics.geo-ph

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preprint2015arXiv

Electron counting and a large family of two-dimensional semiconductors

Comparing with the conventional semiconductors, the choice of the two dimensional semiconductor (2DSC) materials is very limited. Based on proper electron counting, we propose a large family of 2DSCs, all adopting the same structure and consisting of only main group elements. Using advanced density functional calculations, we demonstrate the attainability of these materials, and show that they cover a large range of lattice constants, band gaps and band edge states, therefore are good candidate materials for heterojunctions. This family of two dimensional materials may pave a way toward fabrication of 2DSC devices at the same thriving level as 3D semiconductors.

preprint2013arXiv

Xe anions in stable Mg-Xe compounds: the mechanism of missing Xe in earth atmosphere

The reactivity of noble gas elements is important for both fundamental chemistry and geological science. The discovery of the oxidation of Xe extended the doctrinal boundary of chemistry that a complete shell is inert to reaction. The oxidations of Xe by various geological substances have been researched in order to explain the missing Xe in earth atmosphere. Among many proposals, the chemistry mechanisms are straightforward as they identify chemical processes that can capture Xe in earth interior. However, all the mechanisms based on current noble gas chemistry face the same difficulty: the earth lower mantle and core are rich in metals and therefore their chemical environment is reductive. On the other hand, up till now, the opposite chemical inclination, the reductive propensity, i.e. gaining electrons and forming anions, has not been proposed and examined for noble gas elements. In this work, we demonstrate, using first principles calculations and an efficient structure prediction method, that Xe and Kr can form stable MgXe and MgKr compounds under high pressure. These compounds are intermetallic and Xe or Kr is negatively charged. We also find that elevated temperature has large effect in stabilizing MgXe and MgKr compounds. Our results show that the earth has the capability of capturing Xe but not Kr, which is consistent to the depletion of Xe in earth atmosphere. The stability of these compounds suggests that chemical species with completely filled shell may still gain more electrons filling their outer shell in chemical reactions.

preprint2012arXiv

Cs in high oxidation states and as a p-block element

The major chemical feature of an element is the number of electrons available for forming chemical bonds. A doctrine rooted in the atomic shell model states that the atoms will maintain a complete inner shell while interacting with other atoms. Therefore, group IA elements, for example, are invariably stable in the +1 charge state because the p electrons of their inner shells do not react with other chemical species. This general rule governs our understanding of the structures and reactions of matter and has never been challenged. In this work, we show for the first time that while mixing with fluorine under pressure, Cs atoms will share their 5p electrons and become oxidized to a higher charge state. The formal oxidation state can be as high as +5 within the pressure range of our study (<200 GPa) and stable Cs2+ and Cs3+ compounds can form at lower pressures. While sharing its 5p electrons, Cs behaves like a p-block element forming compounds with molecular, covalent, ionic and metallic features. Considering the pressure range required for the CsFn compounds, the inner shell electrons in other group IA and IIA elements may also bond with F or other chemical species under higher pressure.

preprint2012arXiv

High pressures make Hg a transition metal in a thermodynamically stable solid

The appropriateness of including Hg among the transition metals has been debated for a long time. Although the synthesis of HgF$_{4}$ molecules in gas phase was reported before, the molecules show strong instabilities and dissociate. Therefore, the transition metal propensity of Hg remains an open question. Here, we propose that high pressure provides a controllable method for preparing unusual oxidation states of matter. Using an advanced structure search method based on first-principles electronic structure calculations, we predict that under high pressures, Hg can transfer the electrons in its outmost $d$ shell to F atoms, thereby acting as a transition metal. Oxidation of Hg to the +4 state yielded thermodynamically stable molecular crystals consisting of HgF$_{4}$ planar molecules, a typical geometry for $d^{8}$ metal centers.

preprint2011arXiv

Hybrid functional electronic structure of PbPdO$_2$, a small-gap semiconductor

PbPdO$_2$, a ternary compound containing the lone-pair active ion Pb$^{2+}$ and the square-planar d$^8$ Pd$^{2+}$ ion, has attracted recent interest because of the suggestion that its electronic structure, calculated within density functional theory using either the local density or the generalized gradient approximations, displays zero-gap behavior. In light of the potential ease of doping magnetic ions in this structure, it has been suggested that the introduction of spin, in conjunction with zero band gap, can result in unusual magnetic ground states and unusual magnetotransport. It is known that most electronic structure calculations do not properly obtain a band gap even for the simple oxide PdO, and instead obtain a metal or a zero-gap semiconductor. Here we present density functional calculations employing a screened hybrid functional (HSE) which correctly obtain a band gap for the electronic structure of PdO. When employed to calculate the electronic ground state of PbPdO$_2$, a band gap is again obtained, which is consistent both with the experimental data on this compound, as well as a consideration of valence states and of metal-oxygen connectivity in the crystal structure. We also present comparisons of the absolute positions (relative to the vacuum level) of the conduction band minima and the valence band maxima in α-PbO, PdO and PbPdO$_2$, which suggest ease of $p$-type doping in PbPdO$_2$ that has been observed even in nominally pure materials.