Researcher profile

Manushree Tanwar

Manushree Tanwar contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Malignancy Induced Subtle Perturbation Sensitive Raman Scattering for Glioma Detection and Grading

Subtle changes in Raman spectral line-shape have been observed from malignant human brain cells and its possibility for being used in detection and grading of Glioma has been explored here. The latter has been developed as a result of the fact that the width of the Raman spectra is more sensitive, as compared to the peak position, to the brain tumors. The perturbations induced by the cell-modification, as a consequence to the cancerous growth, may be responsible for the widths variation in the Raman spectrum due to vibrational lifetime alteration enforced at the molecular levels. A consistent cancer induced effect on the spectral width has been observed for three different brain cells Raman modes at different frequencies . Raman spectral analysis reveals that for cancerous cells, the FWHM varies up to 35 % in comparison with the healthy cells. It has been established how a careful analysis of Raman spectra can help in easy detection of brain tumors. The methodology has been validated by studying the effect of similar microscopic perturbations, e.g, Fano coupling and quantum size effects, on different Raman spectral parameters which also reveals Raman width to be the most sensitive parameter.

preprint2019arXiv

Size Dependent Sensitivity of Raman Line-Shape Parameters in Silicon Quantum Wire

A comparison of experimentally observed Raman scattering data with Raman line-shapes, generated theoretically using phonon confinement model, has been carried out to understand the sensitivity of different Raman spectral parameters on quantum confinement effect. Size dependent variations of full width at half maximum (FWHM), Raman peak position and asymmetry ratio have been analyzed to establish the sensitivity of their corresponding physical counterparts (phonon life time and dispersion) in confined systems. The comparison has been done in three different confinement regimes namely, weakly, moderately and strongly. Proper reasoning has been assigned for such a variation after validation of the theoretical analysis with the experimental observations. A moderately confined system was created by preparing 6 nm sized Si NSs using metal induced etching. An asymmetrically broadened and red-shifted Raman line-shape was observed which established that all the parameters get affected in moderately confined system. Sensitivity of a given Raman spectral parameters has been shown to be used as a tool to understand the role of external perturbations in a material.