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Mantas Šimėnas

Mantas Šimėnas contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Random-access quantum memory using chirped pulse phase encoding

As in conventional computing, key attributes of quantum memories are high storage density and, crucially, random access, or the ability to read from or write to an arbitrarily chosen register. However, achieving such random access with quantum memories in a dense, hardware-efficient manner remains a challenge, for example requiring dedicated cavities per qubit or pulsed field gradients. Here we introduce a protocol using chirped pulses to encode qubits within an ensemble of quantum two-level systems, offering both random access and naturally supporting dynamical decoupling to enhance the memory lifetime. We demonstrate the protocol in the microwave regime using donor spins in silicon coupled to a superconducting cavity, storing up to four multi-photon microwave pulses in distinct memory modes and retrieving them on-demand up to 2~ms later. A further advantage is the natural suppression of superradiant echo emission, which we show is critical when approaching unit cooperativity. This approach offers the potential for microwave random access quantum memories with lifetimes exceeding seconds, while the chirped pulse phase encoding could also be applied in the optical regime to enhance quantum repeaters and networks.

preprint2022arXiv

Spin coherence of near-surface ionised $^{125}$Te$^+$ donors in silicon

Impurity spins in crystal matrices are promising components in quantum technologies, particularly if they can maintain their spin properties when close to surfaces and material interfaces. Here, we investigate an attractive candidate for microwave-domain applications, the spins of group-VI Impurity spins in crystal matrices are promising components in quantum technologies, particularly if they can maintain their spin properties when close to surfaces and material interfaces. Here, we investigate an attractive candidate for microwave-domain applications, the spins of group-VI $^{125}$Te$^+$ donors implanted into natural Si at depths as shallow as 20~nm. We show that surface band-bending can be used to ionise such near-surface Te to spin-active Te$^+$ state, and that optical illumination can be used further to control the Te donor charge state. We examine spin activation yield, spin linewidth, relaxation ($T_1$) and coherence times (\ttwo) and show how a zero-field 3.5~GHz `clock transition' extends spin coherence times to over 1~ms, which is about an order of magnitude longer than other near-surface spin systems.

preprint2020arXiv

Spin resonance linewidths of bismuth donors in silicon coupled to planar microresonators

Ensembles of bismuth donor spins in silicon are promising storage elements for microwave quantum memories due to their long coherence times which exceed seconds. Operating an efficient quantum memory requires achieving critical coupling between the spin ensemble and a suitable high-quality factor resonator -- this in turn requires a thorough understanding of the lineshapes for the relevant spin resonance transitions, particularly considering the influence of the resonator itself on line broadening. Here, we present pulsed electron spin resonance measurements of ensembles of bismuth donors in natural silicon, above which niobium superconducting resonators have been patterned. By studying spin transitions across a range of frequencies and fields we identify distinct line broadening mechanisms, and in particular those which can be suppressed by operating at magnetic-field-insensitive `clock transitions'. Given the donor concentrations and resonator used here, we measure a cooperativity $C\sim 0.2$ and based on our findings we discuss a route to achieve unit cooperativity, as required for a quantum memory.