Researcher profile

Manish Singh

Manish Singh contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 15 - UnverifiedVerification L1Unclaimed author
3works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2022arXiv

Defects and Metric Anomalies in Föppl-von Kármán Surfaces

A general framework is developed to study the deformation and stress response in F{ö}ppl-von K{á}rm{á}n shallow shells for a given distribution of defects, such as dislocations, disclinations, and interstitials, and metric anomalies, such as thermal and growth strains. The theory includes dislocations and disclinations whose defect lines can both pierce the two-dimensional surface and lie within the surface. An essential aspect of the theory is the derivation of strain incompatibility relations for stretching and bending strains with incompatibility sources in terms of various defect and metric anomaly densities. The incompatibility relations are combined with balance laws and constitutive assumptions to obtain the inhomogeneous F{ö}ppl-von K{á}rm{á}n equations for shallow shells. Several boundary value problems are posed, and solved numerically, by first considering only dislocations and then disclinations coupled with growth strains.

preprint2021arXiv

Positive disclination in a thin elastic sheet with boundary

An isolated positive wedge disclination deforms an initially flat elastic sheet into a perfect cone when the sheet is of infinite extent and is elastically inextensible. The latter requires the elastic stretching strains to be vanishingly small. In this paper, rigorous analytical and numerical results are obtained for the disclination induced deformed shape and stress field of a bounded F{ö}ppl-von K{á}rm{á}n elastic sheet with finite extensibility, while emphasising the deviations from the perfect cone solution. In particular, the Gaussian curvature field is no longer localised as a Dirac singularity at the defect location whenever elastic extensibility is allowed and is necessarily negative in large regions away from the defect. The stress field, similarly, has no Dirac singularity in the presence of elastic extensibility. However, with increasing Young's modulus of the sheet, while keeping the bending modulus and the domain size fixed, both of these fields tend to develop a Dirac singularity. Noticeably, in this limiting behaviour, inextensibility eludes the bounded elastic sheet due to persisting regions of non-trivial Gaussian curvature away from the defect. Other results in the paper include studying the effect of specific boundary conditions (free, simply supported, or partially clamped) on the Gaussian curvature field away from the defect and on the buckling transition from the flat to a conical solution.

preprint2020arXiv

Chemical segregation in Ge2Sb2Te5 thin films during in-situ heating

Germanium antimony telluride has been the most used and studied phase-change material for electronic memory due to its suitable crystallization temperature, amorphous to crystalline resistance contrast, and stability of the amorphous phase. In this work, the segregation of Ge in a Ge2Sb2Te5 film of 30 nm thickness during heating inside the transmission electron microscope was observed and characterized. The Ge2Sb2Te5 film was deposited using sputtering on a Protochips Fusion holder and left uncapped in atmosphere for about four months. Oxygen incorporated within the film played a significant role in the chemical segregation observed which resulted in amorphous Ge-O grain boundaries and Sb and Te rich crystalline domains. Such composition changes can occur when the phase-change material interfaces insulating oxide layers in an integrated device and would significantly impact its electrical and thermal properties.