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Researcher profile

Makoto Tanimura

Makoto Tanimura contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2014arXiv

Color theorems, chiral domain topology and magnetic properties of FexTaS2

Common mathematical theory can have profound applications in understanding real materials. The intrinsic connection between aperiodic orders observed in the Fibonacci sequence, Penrose tiling, and quasicrystals is a well-known example. Another example is the self-similarity in fractals and dendrites. From transmission electron microscopy experiments, we found that FexTaS2 crystals with x=1/4 and 1/3 exhibit complicated antiphase and chiral domain structures related to ordering of intercalated Fe ions with 2a*2a and sqrt3a*sqrt3a superstructures, respectively. These complex domain patterns are found to be deeply related with the four color theorem, stating that four colors are sufficient to identify the countries on a planar map with proper coloring, and its variations for two-step proper coloring. Furthermore, the domain topology is closely relevant to their magnetic properties. Our discovery unveils the importance of understanding the global topology of domain configurations in functional materials.

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preprint2011arXiv

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi2Se3 films on Si substrates. With a single-step high temperature growth, second phase clusters are formed at an early stage. On the other hand, with low temperature growth, the film tends to be disordered even in the absence of a second phase. With a low temperature initial growth followed by a high temperature growth, second-phase-free atomically sharp interface is obtained between Bi2Se3 and Si substrate, as verified by RHEED (Reflection High Energy Electron Diffraction), TEM (Transmission Electron Microscopy) and XRD (X-Ray Diffraction). The lattice constant of Bi2Se3 is observed to relax to its bulk value during the first quintuple layer according to RHEED analysis, implying the absence of strain from the substrate. TEM shows a fully epitaxial structure of Bi2Se3 film down to the first quintuple layer without any second phase or an amorphous layer.

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preprint2011arXiv

Thickness-dependent bulk properties and weak anti-localization effect in topological insulator Bi2Se3

We show that a number of transport properties in topological insulator (TI) Bi2Se3 exhibit striking thickness-dependences over a range of up to five orders of thickness (3 nm - 170 μm). Volume carrier density decreased with thickness, presumably due to diffusion-limited formation of selenium vacancies. Mobility increased linearly with thickness in the thin film regime and saturated in the thick limit. The weak anti-localization effect was dominated by a single two-dimensional channel over two decades of thickness. The sublinear thickness-dependence of the phase coherence length suggests the presence of strong coupling between the surface and bulk states.

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