Researcher profile

M. Vásquez-Mansilla

M. Vásquez-Mansilla contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - Baseline
2works
0followers
1topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2020arXiv

Magnetoresistance in Fe$_{1-x}$Ga$_x$ thin films presenting striped magnetic pattern: the role of closure domains and domain walls

In this work we show the existence of closure domains in Fe$_{1-x}$Ga$_x$ thin films featuring a striped magnetic pattern and study the effect of the magnetic domain arrangement on the magnetotransport properties. By means of X-ray resonant magnetic scattering, we experimentally demonstrate the presence of such closure domains and estimate their sizes and relative contribution to surface magnetization. Magnetotransport experiments show that the behavior of the magnetoresistance depends on the measurement geometry as well as on the temperature. When the electric current ows perpendicular to the stripe direction, the resistivity decreases when a magnetic field is applied along the stripe direction (negative magnetoresistance) in all the studied temperature range, and the calculations indicate that the main source is the anisotropic magnetoresistance. In the case of current flowing parallel to the stripe domains, the magnetoresistance changes sign, being positive at room temperature and negative at 100 K. To explain this behavior, the contribution to magnetoresistance from the domain walls must be considered besides the anisotropic one.

preprint2015arXiv

Large perpendicular magnetic anisotropy in magnetostrictive Fe$_{1-x}$Ga$_x$ thin films

In this work we report the appearence of a large perpendicular magnetic anisotropy (PMA) in Fe$_{1-x}$Ga$_x$ thin films grown onto ZnSe/GaAs(100). This arising anisotropy is related to the tetragonal metastable phase in as-grown samples recently reported [M. Eddrief {\it et al.}, Phys. Rev. B {\bf 84}, 161410 (2011)]. By means of ferromagnetic resonance studies we measured PMA values up to $\sim$ 5$\times$10$^5$ J/m$^3$. PMA vanishes when the cubic structure is recovered upon annealing at 300$^{\circ}$C. Despite the important values of the magnetoelastic constants measured via the cantilever method, the consequent magnetoelastic contribution to PMA is not enough to explain the observed anisotropy values in the distorted state. {\it Ab initio} calculations show that the chemical ordering plays a crucial role in the appearance of PMA. Through a phenomenological model we are able to explain that an excess of next nearest neighbour Ga pairs (B$_2$-like ordering) along the perpendicular direction arises as the source of PMA in Fe$_{1-x}$Ga$_x$ thin films.