Researcher profile

M. V. Medvedyeva

M. V. Medvedyeva contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2013arXiv

Lindblad equation for a non-interacting fermionic system: full-counting statistics

We develop a method of calculating the full-counting statistics for a non-interacting fermionic system coupled to the memory-less reservoirs. The evolution of the system is described by the Lindblad equation. By the basis change the Liouvillian operator is brought to the quadratic form. This allows us a straightforward calculation of any observable in the non-equilibrium steady state. We introduce the counting field in the Lindblad equation which brings us to the generating function and helps us to obtain all cumulants of the charge transport. For the two-site system we give the expression for the generating function. For system longer than two sites we perform numerical investigations which suggest that it in a uniform system the cumulants of order $k$ are independent of the size of the system for system sizes larger $k+1$. The counting statistics from the Lindblad approach does not take into account interference in the reservoirs which gives a decreased noise in comparison with the Green function method which describes phase coherent leads. The current obtained by two methods is the same, which relies on the current conservation. The Fano factors are different (with a linear relation connecting them) and allow to distinguish between memory-less and phase coherent reservoirs.

preprint2011arXiv

Effects of disorder on the transmission of nodal fermions through a d-wave superconductor

The bulk microwave conductivity of a dirty d-wave superconductor is known to depend sensitively on the range of the disorder potential: long-range scattering enhances the conductivity, while short- range scattering has no effect. Here we show that the three-terminal electrical conductance of a normal-metal-d-wave superconductor-normal-metal junction has a dual behavior: short-range scattering suppresses the conductance, while long-range scattering has no effect.

preprint2011arXiv

Majorana bound states without vortices in topological superconductors with electrostatic defects

Vortices in two-dimensional superconductors with broken time-reversal and spin-rotation symmetry can bind states at zero excitation energy. These socalled Majorana bound states transform a thermal insulator into a thermal metal and may be used to encode topologically protected qubits. We identify an alternative mechanism for the formation of Majorana bound states, akin to the way in which Shockley states are formed on metal surfaces: An atomic-scale electrostatic line defect can have a pair of Majorana bound states at the end points. The Shockley mechanism explains the appearance of a thermal metal in vortex-free lattice models of chiral p-wave superconductors and (unlike the vortex mechanism) is also operative in the topologically trivial phase.

preprint2010arXiv

Absence of a metallic phase in charge-neutral graphene with a random gap

It is known that fluctuations in the electrostatic potential allow for metallic conduction (nonzero conductivity in the limit of an infinite system) if the carriers form a single species of massless two-dimensional Dirac fermions. A nonzero uniform mass $\bar{M}$ opens up an excitation gap, localizing all states at the Dirac point of charge neutrality. Here we investigate numerically whether fluctuations $δM \gg \bar{M} \neq 0$ in the mass can have a similar effect as potential fluctuations, allowing for metallic conduction at the Dirac point. Our negative conclusion confirms earlier expectations, but does not support the recently predicted metallic phase in a random-gap model of graphene.

preprint2010arXiv

Piezoconductivity of gated suspended graphene

We investigate the conductivity of graphene sheet deformed over a gate. The effect of the deformation on the conductivity is twofold: The lattice distortion can be represented as pseudovector potential in the Dirac equation formalism, whereas the gate causes inhomogeneous density redistribution. We use the elasticity theory to find the profile of the graphene sheet and then evaluate the conductivity by means of the transfer matrix approach. We find that the two effects provide functionally different contributions to the conductivity. For small deformations and not too high residual stress the correction due to the charge redistribution dominates and leads to the enhancement of the conductivity. For stronger deformations, the effect of the lattice distortion becomes more important and eventually leads to the suppression of the conductivity. We consider homogeneous as well as local deformation. We also suggest that the effect of the charge redistribution can be best measured in a setup containing two gates, one fixing the overall charge density and another one deforming graphene locally.