Researcher profile

M. Trezza

M. Trezza contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2014arXiv

Superconducting nanowire quantum interference device based on Nb ultrathin films deposited on self-assembled porous Si templates

Magnetoresistance oscillations were observed on networks of superconducting ultrathin Nb nanowires presenting evidences of either thermal or quantum activated phase slips. The magnetic transport data, discussed in the framework of different scenarios, reveal that the system behaves coherently in the temperature range where the contribution of the fluctuations is important.

preprint2013arXiv

Nonlinear current-voltage characteristics due to quantum tunneling of phase slips in superconducting Nb nanowire networks

We report on the transport properties of an array of N about 30 interconnected Nb nanowires, grown by sputtering on robust porous Si substrates. The analyzed system exhibits a broad resistive transition in zero magnetic field, H, and highly nonlinear V(I) characteristics as a function of H which can be both consistently described by quantum tunneling of phase slips.

preprint2012arXiv

Quantum phase slips in superconducting Nb nanowire networks deposited on self-assembled Si templates

Robust porous silicon substrates were employed for generating interconnected networks of superconducting ultrathin Nb nanowires. Scanning electron microscopy analysis was performed to investigate the morphology of the samples, which constitute of polycrystalline single wires with grain size of about 10 nm. The samples exhibit nonzero resistance over a broad temperature range below the critical temperature, fingerprint of phase slippage processes. The transport data are satisfactory reproduced by models describing both thermal and quantum fluctuations of the superconducting order parameter in thin homogeneous superconducting wires.

preprint2009arXiv

Evidence of fractional matching states in nanoperforated Nb thin film grown on porous silicon

Resistive transitions have been measured on a perforated Nb thin film with a lattice of holes with the period of the order of ten nanometers. Bumps in the dR/dH versus H curves have been observed at the first matching field and its fractional values, 1/4, 1/9 and 1/16. This effect has been related to different vortex lattice configurations made available by the underlying lattice of holes.