Researcher profile

M. Tinkham

M. Tinkham contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2006arXiv

Ge/Si nanowire mesoscopic Josephson junctions

The controlled growth of nanowires (NWs) with dimensions comparable to the Fermi wavelengths of the charge carriers allows fundamental investigations of quantum confinement phenomena. Here, we present studies of proximity-induced superconductivity in undoped Ge/Si core/shell NW heterostructures contacted by superconducting leads. By using a top gate electrode to modulate the carrier density in the NW, the critical supercurrent can be tuned from zero to greater than 100 nA. Furthermore, discrete sub-bands form in the NW due to confinement in the radial direction, which results in stepwise increases in the critical current as a function of gate voltage. Transport measurements on these superconductor-NW-superconductor devices reveal high-order (n = 25) resonant multiple Andreev reflections, indicating that the NW channel is smooth and the charge transport is highly coherent. The ability to create and control coherent superconducting ordered states in semiconductor-superconductor hybrid nanostructures allows for new opportunities in the study of fundamental low-dimensional superconductivity.

preprint2002arXiv

Electron Transport in Metallic Grains

We discuss electron transport in individual nanometer-scale metallic grains at dilution refrigerator temperatures. In the weak coupling regime, the grains exhibit Coulomb blockade and discrete energy levels. Electron-electron interactions lead to clustering and broadening of quasiparticle states. Magnetic field dependences of tunneling resonances directly reveal Kramers degeneracy and Lande g-factors. In grains of Au, which have strong spin-orbit interaction, g-factors are strongly suppressed from the free electron value. We have recently studied grains in the strong coupling regime. Coulomb blockade persists in this regime. It leads to a suppression in sample conductance at zero bias voltage at low temperatures. The conductance fluctuates with the applied magnetic field near zero bias voltage. We present evidence that the fluctuations are induced by electron spin. This paper reviews the evolving progress in interpreting these observations.