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M. Taut

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2016arXiv

Electronic structure of interfaces between hexagonal and rhombohedral graphite

The electronic structure including energy bands, band weights, and local density of states (LDOS) of interfaces between hexagonal (AB) and rhombohedral (ABC) graphite has been has been calculated. The full-potential local-orbital code (FPLO) and the generalized gradient approximation (GGA) to the density functional theory has been used. Both of the two existing interface structures host (localized) interface bands, which are located around the K-point in the Brillouin zone, and which give rise to strong peaks in the LDOS at the Fermi energy. All interface bands near the Fermi energy are localized at monomers (single atoms with dangling $p_z$ bonds), whereas those around 0.5 eV belong to $p_z$-bonded trimers, which are created by the the interface and which are not found in the two adjacent bulk substances. There is also an interface band at the (AB) side of the interface which resembles one of the interface states near a stacking fault in (AB) graphite.

preprint2013arXiv

Electronic structure of stacking faults in hexagonal graphite

We present results of self-consistent, full-potential electronic structure calculations for slabs of hexagonal graphite with stacking faults and for slabs with one displaced surface layer. There are two types of stacking faults, which differ qualitatively in their chemical bonding picture. We find, that both types induce localized interface bands near the symmetry line K-M in the Brillouin zone and a related peak in the local density of states (LDOS) very close to the Fermi energy, which should give rise to a dominating contribution of the interface bands to the local conductivity at the stacking faults. In contrast, a clean surface does not host any surface bands in the energy range of the pi and sigma bands, and the LDOS near the surface is even depleted. On the other hand, displacement of even one single surface layer induces a surface band near K-M. A special role play p_z-bonded dimers (directed perpendicular to the layers) in the vicinity of one type of stacking faults. They produce a half-filled pair of interface states / interface resonances. The formation energy of both types of stacking faults and the surface energy are estimated.

preprint2011arXiv

Density-functional investigation of rhombohedral stacks of graphene: topological surface states, nonlinear dielectric response, and bulk limit

A DFT-based investigation of rhombohedral (ABC)-type graphene stacks in finite static electric fields is presented. Electronic band structures and field-induced charge densities are compared with related literature data as well as with own results on (AB) stacks. It is found, that the undoped AB-bilayer has a tiny Fermi line consisting of one electron pocket around the K-point and one hole pocket on the line K-$Γ$. In contrast to (AB) stacks, the breaking of translational symmetry by the surface of finite (ABC) stacks produces a gap in the bulk-like states for slabs up to a yet unknown critical thickness $N^{\rm semimet} \gg 10$, while ideal (ABC) bulk ($β$-graphite) is a semi-metal. Unlike in (AB) stacks, the ground state of (ABC) stacks is shown to be topologically non-trivial in the absence of external electric field. Consequently, surface states crossing the Fermi level must unavoidably exist in the case of (ABC)-type stacking, which is not the case in (AB)-type stacks. These surface states in conjunction with the mentioned gap in the bulk-like states have two major implications. First, electronic transport parallel to the slab is confined to a surface region up to the critical layer number $N^{\rm semimet}$. Related implications are expected for stacking domain walls and grain boundaries. Second, the electronic properties of (ABC) stacks are highly tunable by an external electric field. In particular, the dielectric response is found to be strongly nonlinear and can e.g. be used to discriminate slabs with different layer numbers. Thus, (ABC) stacks rather than (AB) stacks with more than two layers should be of potential interest for applications relying on the tunability by an electric field.

preprint2009arXiv

Violation of non-interacting $\cal V$-representability of the exact solutions of the Schrödinger equation for a two-electron quantum dot in a homogeneous magnetic field

We have shown by using the exact solutions for the two-electron system in a parabolic confinement and a homogeneous magnetic field [ M.Taut, J Phys.A{\bf 27}, 1045 (1994) ] that both exact densities (charge- and the paramagnetic current density) can be non-interacting $\cal V$-representable (NIVR) only in a few special cases, or equivalently, that an exact Kohn-Sham (KS) system does not always exist. All those states at non-zero $B$ can be NIVR, which are continuously connected to the singlet or triplet ground states at B=0. In more detail, for singlets (total orbital angular momentum $M_L$ is even) both densities can be NIVR if the vorticity of the exact solution vanishes. For $M_L=0$ this is trivially guaranteed because the paramagnetic current density vanishes. The vorticity based on the exact solutions for the higher $|M_L|$ does not vanish, in particular for small r. In the limit $r \to 0$ this can even be shown analytically. For triplets ($M_L$ is odd) and if we assume circular symmetry for the KS system (the same symmetry as the real system) then only the exact states with $|M_L|= 1$ can be NIVR with KS states having angular momenta $m_1=0$ and $|m_2|=1$. Without specification of the symmetry of the KS system the condition for NIVR is that the small-r-exponents of the KS states are 0 and 1.