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Researcher profile

M. S. Dresselhaus

M. S. Dresselhaus contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-con

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Published work

7 published item(s)

preprint2015arXiv

Thermionic Emission and Negative dI/dV in Photoactive Graphene Heterostructures

Transport in photoactive graphene heterostructures, originating from the dynamics of photogenerated hot carriers, is governed by the processes of thermionic emission, electron-lattice thermal imbalance and cooling. These processes give rise to interesting photoresponse effects, in particular negative differential resistance (NDR) arising in the hot-carrier regime. The NDR effect stems from a strong dependence of electron-lattice cooling on the carrier density, which results in the carrier temperature dropping precipitously upon increasing bias. The ON-OFF switching between the NDR regime and the conventional cold emission regime, as well as the gate-controlled closed-circuit current that is present at zero bias voltage, can serve as signatures of hot-carrier dominated transport.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Disorder-induced double resonant Raman process in graphene

An analytical study is presented of the double resonant Raman scattering process in graphene, responsible for the D and D$^{\prime}$ features in the Raman spectra. This work yields analytical expressions for the D and D$^{\prime}$ integrated Raman intensities that explicitly show the dependencies on laser energy, defect concentration, and electronic lifetime. Good agreement is obtained between the analytical results and experimental measurements on samples with increasing defect concentrations and at various laser excitation energies. The use of Raman spectroscopy to identify the nature of defects is discussed. Comparison between the models for the edge-induced and the disorder-induced D band intensity suggests that edges or grain boundaries can be distinguished from disorder by the different dependence of their Raman intensity on laser excitation energy. Similarly, the type of disorder can potentially be identified not only by the intensity ratio $I_{\mathrm{D}}/I_{\mathrm{D}^{\prime}}$, but also by its laser energy dependence. Also discussed is a quantitative analysis of quantum interference effects of the graphene wavefunctions, which determine the most important phonon wavevectors and scattering processes responsible for the D and D$^{\prime}$ bands.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Group Theory analysis of phonons in two-dimensional Transition Metal Dichalcogenides

Transition metal dichalcogenides (TMDCs) have emerged as a new two dimensional materials field since the monolayer and few-layer limits show different properties when compared to each other and to their respective bulk materials. For example, in some cases when the bulk material is exfoliated down to a monolayer, an indirect-to-direct band gap in the visible range is observed. The number of layers $N$ ($N$ even or odd) drives changes in space group symmetry that are reflected in the optical properties. The understanding of the space group symmetry as a function of the number of layers is therefore important for the correct interpretation of the experimental data. Here we present a thorough group theory study of the symmetry aspects relevant to optical and spectroscopic analysis, for the most common polytypes of TMDCs, i.e. $2Ha$, $2Hc$ and $1T$, as a function of the number of layers. Real space symmetries, the group of the wave vectors, the relevance of inversion symmetry, irreducible representations of the vibrational modes, optical selection rules and Raman tensors are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Experimental Determination of the Lorenz Number in Cu0.01Bi2Te2.7Se0.3 and Bi0.88Sb0.12

Nanostructuring has been shown to be an effective approach to reduce the lattice thermal conductivity and improve the thermoelectric figure of merit. Because the experimentally measured thermal conductivity includes contributions from both carriers and phonons, separating out the phonon contribution has been difficult and is mostly based on estimating the electronic contributions using the Wiedemann-Franz law. In this paper, an experimental method to directly measure electronic contributions to the thermal conductivity is presented and applied to Cu0.01Bi2Te2.7Se0.3, [Cu0.01Bi2Te2.7Se0.3]0.98Ni0.02, and Bi0.88Sb0.12. By measuring the thermal conductivity under magnetic field, electronic contributions to thermal conductivity can be extracted, leading to knowledge of the Lorenz number in thermoelectric materials.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Phonon self-energy corrections to non-zero wavevector phonon modes in single-layer graphene

Phonon self-energy corrections have mostly been studied theoretically and experimentally for phonon modes with zone-center (q = 0) wave-vectors. Here, gate-modulated Raman scattering is used to study phonons of a single layer of graphene (1LG) in the frequency range from 2350 to 2750 cm-1, which shows the G* and the G'-band features originating from a double-resonant Raman process with q \not= 0. The observed phonon renormalization effects are different from what is observed for the zone-center q = 0 case. To explain our experimental findings, we explored the phonon self-energy for the phonons with non-zero wave-vectors (q \not= 0) in 1LG in which the frequencies and decay widths are expected to behave oppositely to the behavior observed in the corresponding zone-center q = 0 processes. Within this framework, we resolve the identification of the phonon modes contributing to the G* Raman feature at 2450 cm-1 to include the iTO+LA combination modes with q \not= 0 and the 2iTO overtone modes with q = 0, showing both to be associated with wave-vectors near the high symmetry point K in the Brillouin zone.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Kohn Anomaly in Raman Spectroscopy of Single Wall Carbon Nanotubes

Phonon softening phenomena of the $Γ$ point optical modes including the longitudinal optical mode, transverse optical mode and radial breathing mode in "metallic" single wall carbon nanotubes are reviewed from a theoretical point of view. The effect of the curvature-induced mini-energy gap on the phonon softening which depends on the Fermi energy and chirality of the nanotube is the main subject of this article. We adopt an effective-mass model with a deformation-induced gauge field which provides us with a unified way to discuss the curvature effect and the electron-phonon interaction.

0 citations0 reviewsNo code linkedOpen access
preprint1999arXiv

Comparison of Power Dependence of Microwave Surface Resistance of Unpatterned and Patterned YBCO Thin Film

The effect of the patterning process on the nonlinearity of the microwave surface resistance $R_S$ of YBCO thin films is investigated. With the use of a sapphire dielectric resonator and a stripline resonator, the microwave $R_S$ of YBCO thin films was measured before and after the patterning process, as a function of temperature and the rf peak magnetic field in the film. The microwave loss was also modeled, assuming a $J_{rf}^2$ dependence of $Z_S(J_{rf})$ on current density $J_{rf}$. Experimental and modeled results show that the patterning has no observable effect on the microwave residual $R_S$ or on the power dependence of $R_S$.

0 citations0 reviewsNo code linkedOpen access