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M. R. Wagner

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Published work

4 published item(s)

preprint2021arXiv

Anisotropic Thermoreflectance Thermometry: A contactless frequency-domain approach to study anisotropic thermal transport

We developed a novel contactless frequency-domain approach to study thermal transport, which is particularly convenient when thermally anisotropic materials are considered. The method is based on a similar line-shaped heater geometry as used in the 3-omega method, however, keeping all the technical advantages offered by non-contact methodologies. The present method is especially suitable to determine all the elements of the thermal conductivity tensor, which is experimentally achieved by simply rotating the sample with respect to the line-shaped optical heater. We provide the mathematical solution of the heat equation for the cases of anisotropic substrates, multilayers, as well as thin films. This methodology allows an accurate determination of the thermal conductivity, and does not require complex modeling or intensive computational efforts to process the experimental data, i.e., the thermal conductivity is obtained through a simple linear fit ("slope method"), in a similar fashion as in the 3-omega method. We demonstrate the potential of this approach by studying isotropic and anisotropic materials in a wide range of thermal conductivities. In particular, we have studied the following inorganic and organic systems: (i) glass, Si, and Ge substrates (isotropic), (ii) $β$-Ga$_2$O$_3$, and a Kapton substrate (anisotropic) and , (iii) a 285 nm SiO$_2$/Si thin film. The accuracy in the determination of the thermal conductivity is estimated at $\approx$ 5\%, whereas the best temperature resolution is $Δ$T $\approx$ 3 mK.

preprint2017arXiv

Tuning of the Quantum-Confined Stark Effect in Wurtzite $[000\bar{1}]$ Group-III-Nitride Nanostructures by the Internal-Field-Guarded-Active-Region Design

Recently, we suggested an unconventional approach [the so-called Internal-Field-Guarded-Active-Region Design (IFGARD)] for the elimination of the crystal polarization field induced quantum confined Stark effect (QCSE) in polar semiconductor heterostructures. And in this work, we demonstrate by means of micro-photoluminescence techniques the successful tuning as well as the elimination of the QCSE in strongly polar $[000\bar{1}]$ wurtzite GaN/AlN nanodiscs while reducing the exciton life times by more than two orders of magnitude. The IFGARD based elimination of the QCSE is independent of any specific crystal growth procedures. Furthermore, the cone-shaped geometry of the utilized nanowires (which embeds the investigated IFGARD nanodiscs) facilitates the experimental differentiation between quantum confinement- and QCSE-induced emission energy shifts. Due to the IFGARD, both effects become independently adaptable.

preprint2016arXiv

Electronic excitations stabilised by a degenerate electron gas in semiconductors

Excitons in semiconductors and insulators consist of fermionic subsystems, electrons and holes, whose attractive interaction facilitates bound quasiparticles with quasi-bosonic character due to even-numbered pair spins. In the presence of a degenerate electron gas, such excitons dissociate due to free carrier screening, leaving a spectrally broad and faint optical signature behind. Contrary to this expected behaviour, we have discovered pronounced emission traces in bulk, germanium-doped GaN up to 100 K, mimicking excitonic behaviour at high free electron concentrations from 3.4E19/cm3 to 8.9E19/cm3. Consequently, we show that a degenerate, three-dimensional electron gas stabilizes a novel class of quasiparticles, named collexons, by many-particle effects dominated by exchange of electrons with the Fermi gas. The observation of collexons and their stabilisation with rising doping concentration, is facilitated by a superior crystal quality due to perfect substitution of the host atom with the dopant.

preprint2013arXiv

A novel high resolution contactless technique for thermal field mapping and thermal conductivity determination: Two-Laser Raman Thermometry

We present a novel high resolution contactless technique for thermal conductivity determination and thermal field mapping based on creating a thermal distribution of phonons using a heating laser, while a second laser probes the local temperature through the spectral position of a Raman active mode. The spatial resolution can be as small as $300$ nm, whereas its temperature accuracy is $\pm 2$ K. We validate this technique investigating the thermal properties of three free-standing single crystalline Si membranes with thickness of 250, 1000, and 2000 nm. We show that for 2-dimensional materials such as free-standing membranes or thin films, and for small temperature gradients, the thermal field decays as $T(r) \propto ln(r)$ in the diffusive limit. The case of large temperature gradients within the membranes leads to an exponential decay of the thermal field, $T \propto exp[-A \cdot ln(r)]$. The results demonstrate the full potential of this new contactless method for quantitative determination of thermal properties. The range of materials to which this method is applicable reaches far beyond the here demonstrated case of Si, as the only requirement is the presence of a Raman active mode.