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M. R. Connolly

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con

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preprint2025arXiv

Materials for Quantum Technologies: a Roadmap for Spin and Topology

In this Perspective article, we explore some of the promising spin and topology material platforms (e.g. spins in semi- and superconductors, skyrmionic, topological and 2D materials) being developed for such quantum components as qubits, superconducting memories, sensing, and metrological standards and discuss their figures of merit. Spin- and topology-related quantum phenomena have several advantages, including high coherence time, topological protection and stability, low error rate, relative ease of engineering and control, simple initiation and read-out. However, the relevant technologies are at different stages of research and development, and here we discuss their state-of-the-art, potential applications, challenges and solutions.

preprint2015arXiv

Magnetic field induced charge redistribution in disordered graphene double quantum dots

We have studied the transport properties of a large graphene double quantum dot under the influence of background disorder potential and magnetic field. At low temperatures, the evolution of the charge-stability diagram as a function of B-field is investigated up to 10 Tesla. Our results indicate that the charging energy of quantum dot is reduced, and hence the size of the dot increases, at high magnetic field. We provide an explanation of our results using a tight-binding model, which describes the charge redistribution in a disordered graphene quantum dot via the formation of Landau levels and edge states. Our model suggests that the tunnel barriers separating different electron/hole puddles in a dot become transparent at high B-fields, resulting in the charge delocalization and reduced charging energy observed experimentally.

preprint2015arXiv

Vortex detection and quantum transport in mesoscopic graphene Josephson junction arrays

We investigate mesoscopic Josephson junction arrays created by patterning superconducting disks on monolayer graphene, concentrating on the high-$T/T_c$ regime of these devices and the phenomena which contribute to the superconducting glass state in diffusive arrays. We observe features in the magnetoconductance at rational fractions of flux quanta per array unit cell, which we attribute to the formation of flux-quantized vortices. The applied fields at which the features occur are well described by Ginzburg-Landau simulations that take into account the number of unit cells in the array. We find that the mean conductance and universal conductance fluctuations are both enhanced below the critical temperature and field of the superconductor, with greater enhancement away from the graphene Dirac point.

preprint2014arXiv

Direct Imaging of Coherent Quantum Transport in Graphene Heterojunctions

We fabricate a graphene p-n-p heterojunction and exploit the coherence of weakly-confined Dirac quasiparticles to resolve the underlying scattering potential using low temperature scanning gate microscopy. The tip-induced perturbation to the heterojunction modifies the condition for resonant scattering, enabling us to detect localized Fabry-Perot cavities from the focal point of halos in scanning gate images. In addition to halos over the bulk we also observe ones spatially registered to the physical edge of the graphene. Guided by quantum transport simulations we attribute these to modified resonant scattering at the edges within elongated cavities that form due to focusing of the electrostatic field.

preprint2014arXiv

Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene

We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.

preprint2012arXiv

Gigahertz quantized charge pumping in graphene quantum dots

Single electron pumps are set to revolutionize electrical metrology by enabling the ampere to be re-defined in terms of the elementary charge of an electron. Pumps based on lithographically-fixed tunnel barriers in mesoscopic metallic systems and normal/superconducting hybrid turnstiles can reach very small error rates, but only at MHz pumping speeds corresponding to small currents of the order 1 pA. Tunable barrier pumps in semiconductor structures have been operated at GHz frequencies, but the theoretical treatment of the error rate is more complex and only approximate predictions are available. Here, we present a monolithic, fixed barrier single electron pump made entirely from graphene. We demonstrate pump operation at frequencies up to 1.4 GHz, and predict the error rate to be as low as 0.01 parts per million at 90 MHz. Combined with the record-high accuracy of the quantum Hall effect and proximity induced Josephson junctions, accurate quantized current generation brings an all-graphene closure of the quantum metrological triangle within reach. Envisaged applications for graphene charge pumps outside quantum metrology include single photon generation via electron-hole recombination in electrostatically doped bilayer graphene reservoirs, and for readout of spin-based graphene qubits in quantum information processing.

preprint2012arXiv

Unraveling quantum Hall breakdown in bilayer graphene with scanning gate microscopy

We use low-temperature scanning gate microscopy (SGM) to investigate the breakdown of the quantum Hall regime in an exfoliated bilayer graphene flake. SGM images captured during breakdown exhibit intricate patterns of "hotspots" where the conductance is strongly affected by the presence of the tip. Our results are well described by a model based on quantum percolation which relates the points of high responsivity to tip-induced scattering between localized Landau levels.

preprint2011arXiv

Atomic force microscope nanolithography of graphene: cuts, pseudo-cuts and tip current measurements

We investigate atomic force microscope nanolithography of single and bilayer graphene. In situ tip current measurements show that cutting of graphene is not current driven. Using a combination of transport measurements and scanning electron microscopy we show that, while indentations accompanied by tip current appear in the graphene lattice for a range of tip voltages, real cuts are characterized by a strong reduction of the tip current above a threshold voltage. The reliability and flexibility of the technique is demonstrated by the fabrication, measurement, modification and re-measurement of graphene nanodevices with resolution down to 15 nm.

preprint2011arXiv

Reading and writing charge on graphene devices

We use a combination of charge writing and scanning gate microscopy to map and modify the local charge neutrality point of graphene field-effect devices. We give a demonstration of the technique by writing remote charge in a thin dielectric layer over the graphene-metal interface and detecting the resulting shift in local charge neutrality point. We perform electrostatic simulations to characterize the gating effect of a realistic scanning probe tip on a graphene bilayer and find a good agreement with the experimental results.

preprint2010arXiv

Tilted potential induced coupling of localized states in a graphene nanoconstriction

We use the charged tip of a low temperature scanning probe microscope to perturb the transport through a graphene nanoconstriction. Maps of the conductance as a function of tip position display concentric halos, and by following the expansion of the halos with back-gate voltage we are able to identify an elongated domain over the nanoconstriction where they originate. Amplitude modulations of the transmission resonances are correlated with the gradient of the tip-induced potential and we analyze this in terms of modified coupling between localized states.

preprint2009arXiv

Scanning gate microscopy of current-annealed single layer graphene

We have used scanning gate microscopy to explore the local conductivity of a current-annealed graphene flake. A map of the local neutrality point (NP) after annealing at low current density exhibits micron-sized inhomogeneities. Broadening of the local e-h transition is also correlated with the inhomogeneity of the NP. Annealing at higher current density reduces the NP inhomogeneity, but we still observe some asymmetry in the e-h conduction. We attribute this to a hole doped domain close to one of the metal contacts combined with underlying striations in the local NP.