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M. Portail

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Published work

4 published item(s)

preprint2015arXiv

Made-to-Measure models of the Galactic Box/Peanut bulge: stellar and total mass in the bulge region

We construct dynamical models of the Milky Way's Box/Peanut (B/P) bulge, using the recently measured 3D density of Red Clump Giants (RCGs) as well as kinematic data from the BRAVA survey. We match these data using the NMAGIC Made-to-Measure method, starting with N-body models for barred discs in different dark matter haloes. We determine the total mass in the bulge volume of the RCGs measurement (+-2.2 x +- 1.4 x +- 1.2 kpc) with unprecedented accuracy and robustness to be 1.84 +- 0.07 x10^10 Msun. The stellar mass in this volume varies between 1.25-1.6 x10^10 Msun, depending on the amount of dark matter in the bulge. We evaluate the mass-to-light and mass-to-clump ratios in the bulge and compare them to theoretical predictions from population synthesis models. We find a mass-to-light ratio in the K-band in the range 0.8-1.1. The models are consistent with a Kroupa or Chabrier IMF, but a Salpeter IMF is ruled out for stellar ages of 10 Gyr. To match predictions from the Zoccali IMF derived from the bulge stellar luminosity function requires about 40% or 0.7 x10^10 Msun dark matter in the bulge region. The BRAVA data together with the RCGs 3D density imply a low pattern speed for the Galactic B/P bulge of 25-30 km.s-1.kpc-1. This would place the Galaxy among the slow rotators (R >= 1.5). Finally, we show that the Milky Way's B/P bulge has an off-centred X structure, and that the stellar mass involved in the peanut shape accounts for at least 20% of the stellar mass of the bulge, significantly larger than previously thought.

preprint2015arXiv

Peanuts, brezels and bananas: food for thought on the orbital structure of the Galactic bulge

Recent observations have discovered the presence of a Box/Peanut or X-shape structure in the Galactic bulge. Such Box/Peanut structures are common in external disc galaxies, and are well-known in N-body simulations where they form following the buckling instability of a bar. From studies of analytical potentials and N-body models it has been claimed in the past that Box/Peanut bulges are supported by "bananas", or x1v1 orbits. We present here a set of N-body models where instead the peanut bulge is mainly supported by brezel-like orbits, allowing strong peanuts to form with short extent relative to the bar length. This shows that stars in the X-shape do not necessarily stream along banana orbits which follow the arms of the X-shape. The brezel orbits are also found to be the main orbital component supporting the peanut shape in our recent Made-to-Measure dynamical models of the Galactic bulge. We also show that in these models the fraction of stellar orbits that contribute to the X-structure account for 40-45% of the stellar mass.

preprint2015arXiv

Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by sublimation of Si, under higher magnetic fields. Here, we report on a device made of graphene grown by chemical vapour deposition on SiC which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron density devices.

preprint2014arXiv

Magnetoresistance of disordered graphene: from low to high temperatures

We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from $T$ = 1.7 K up to room temperature. The MR exhibits a maximum in the temperature range $120-240$ K. The maximum is observed at intermediate magnetic fields ($B=2-6$ T), in between the weak localization and the Shubnikov-de Haas regimes. It results from the competition of two mechanisms. First, the low field magnetoresistance increases continuously with $T$ and has a purely classical origin. This positive MR is induced by thermal averaging and finds its physical origin in the energy dependence of the mobility around the Fermi energy. Second, the high field negative MR originates from the electron-electron interaction (EEI). The transition from the diffusive to the ballistic regime is observed. The amplitude of the EEI correction points towards the coexistence of both long and short range disorder in these samples.