Researcher profile

M. Parrinello

M. Parrinello contributes to research discovery and scholarly infrastructure.

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Biological Physics cond-mat cond-mat.stat-mech physics.chem-ph physics.comp-ph

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preprint2010arXiv

Enhanced Sampling in the Well-Tempered Ensemble

We introduce the well-tempered ensemble (WTE) which is the biased ensemble sampled by well-tempered metadynamics when the energy is used as collective variable. WTE can be designed so as to have approximately the same average energy as the canonical ensemble but much larger fluctuations. These two properties lead to an extremely fast exploration of phase space. An even greater efficiency is obtained when WTE is combined with parallel tempering. Unbiased Boltzmann averages are computed on the fly by a recently developed reweighting method [M. Bonomi et al. J. Comput. Chem. 30, 1615 (2009)]. We apply WTE and its parallel tempering variant to the 2d Ising model and to a Go-model of HIV protease, demonstrating in these two representative cases that convergence is accelerated by orders of magnitude.

preprint1993arXiv

Structural Phase Trasformations via Ab-Initio Molecular Dynamics

Available simulation methods, suitable to describe solid-solid phase transitions occurring upon increasing of presssure and/or temperature, are based on empirical interatomic potentials: this restriction reduces the predictive power, and thus the general usefulness of numeric simulations in this very relevant field. We present a new simulation scheme which allows, for the first time, the simulation of these phenomena with the correct quantum-mechanical description of interatomic forces and internal stress, along with the correct statistical mechanics of ionic degrees of freedom. The method is obtained by efficiently combining the Car-Parrinello method for ab- initio molecular dynamics with the Parrinello Rahman method to account for a variable cell shape. Within this scheme phase trasformations may spontaneously take place during the simulation with variation of external pressure and/or temperature. The validity of the method is demonstrated by simulating the metal-insulator transition in Silicon (from diamond structure to simple hexagonal structure) under high pressure.