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Researcher profile

M. Mottonen

M. Mottonen contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallquant-phcond-mat.mtrl-scicond-mat.supr-con

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Published work

6 published item(s)

preprint2011arXiv

Single-electron shuttle based on a silicon quantum dot

We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source and to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency f_p. Current plateaus at integer levels of ef_p are observed up to f_p = 240 MHz operation frequencies. The observed results are explained by a sequential tunneling model which suggests that the electron gas may be heated substantially by the ac driving voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Decoherence in adiabatic quantum evolution - application to Cooper pair pumping

One of the challenges of adiabatic control theory is the proper inclusion of the effects of dissipation. Here, we study the adiabatic dynamics of an open two-level quantum system deriving a generalized master equation to consistently account for the combined action of the driving and dissipation. We demonstrate that in the zero temperature limit the ground state dynamics is not affected by environment. As an example, we apply our theory to Cooper pair pumping which demonstrates the robustness of ground state adiabatic evolution.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Environmentally Activated Tunneling Events in a Hybrid Single-Electron Box

We have measured individual tunneling events and Coulomb step shapes in single-electron boxes with opaque superconductor-normal metal tunnel junctions. We observe anomalous broadening of the Coulomb step with decreasing temperature in a manner that is consistent with activation of first-order tunneling events by an external dissipative electromagnetic environment. We demonstrate that the rates for energetically unfavourable tunneling events saturate to finite values at low temperatures, and that the saturation level can be suppressed by more than an order of magnitude by a capacitive shunt near the device. The findings are important in assessing the performance limits of any single-electronic device. In particular, master equation based simulations show that the electromagnetic environment realized in the capacitively shunted devices allows for a metrologically accurate charge pump based on hybrid tunnnel junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Photon assisted tunneling as an origin of the Dynes density of states

We show that the effect of a high-temperature environment in current transport through a normal metal-insulator-superconductor tunnel junction can be described by an effective density of states (DOS) in the superconductor. In the limit of a resistive low-ohmic environment, this DOS reduces into the well-known Dynes form. Our theoretical result is supported by experiments in engineered environments. We apply our findings to improve the performance of a single-electron turnstile, a potential candidate for a metrological current source.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Observation of the single-electron regime in a highly tunable silicon quantum dot

We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot energy levels to be probed without affecting the electron density in the leads, and vice versa. Appropriate gate biasing enables the dot occupancy to be reduced to the single-electron level, as evidenced by magnetospectroscopy measurements of the ground state of the first two charge transitions. Independent gate control of the electron reservoirs also enables discrimination between excited states of the dot and density of states modulations in the leads.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Probe and Control of the Reservoir Density of States in Single-Electron Devices

We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in DOS can be moved in the transport window independently of the other device properties, and in agreement with the theoretical analysis. This method introduces a fast and convenient way of identifying excited states in these emerging nanostructures.

0 citations0 reviewsNo code linkedOpen access