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M. Mongillo

M. Mongillo appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2024arXiv

Exploration of the Muon $g-2$ and Light Dark Matter explanations in NA64 with the CERN SPS high energy muon beam

We report on a search for a new $Z'$ ($L_μ-L_τ$) vector boson performed at the NA64 experiment employing a high energy muon beam and a missing energy-momentum technique. Muons from the M2 beamline at the CERN Super Proton Synchrotron with a momentum of 160 GeV/c are directed to an active target. A signal event is a single scattered muon with momentum $<$ 80 GeV/c in the final state, accompanied by missing energy, i.e. no detectable activity in the downstream calorimeters. For a total statistic of $(1.98\pm0.02)\times10^{10}$ muons on target, no event is observed in the expected signal region. This allows us to set new limits on part of the remaining $(m_{Z'},\ g_{Z'})$ parameter space which could provide an explanation for the muon $(g-2)_μ$ anomaly. Additionally, our study excludes part of the parameter space suggested by the thermal Dark Matter relic abundance. Our results pave the way to explore Dark Sectors and light Dark Matter with muon beams in a unique and complementary way to other experiments.

preprint2010arXiv

Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon

The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductorsemiconductor devices, such as resonant supercurrent transistors, when the dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling strength with pronounced gate-voltage and magnetic-field dependence.

preprint2010arXiv

Quantum transport in GaN/AlN double-barrier heterostructure nanowires

We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type doping modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped middle region, forming single or multiple islands with a characteristic length of ~100 nm. The incorporation of two AlN tunnel barriers causes confinement to occur within the GaN well in between. In the case of 6-nm-thick wells and 2-nm-thick barriers, we observe characteristic signatures of Coulomb-blockaded transport in single quantum dots with discrete energy states. For narrower wells and barriers, Coulomb-blockade effects do not play a significant role while the onset of resonant tunneling via the confined quantum levels is accompanied by a negative differential resistance surviving up to ~150 K.