Chemistry and structure of homoepitaxial SrTiO films and their influence on oxide-heterostructure interfaces
The properties of single-crystal SrTiO substrates and homoepitaxial SrTiO films grown by pulsed laser deposition have been compared, in order to understand the loss of interfacial conductivity when more than a critical thickness of nominally homoepitaxial SrTiO is inserted between a LaAlO film and a SrTiO substrate. In particular, the chemical composition and the structure of homoepitaxial SrTiO investigated by low-energy ion-scattering and surface x-ray diffraction, show that for insulating heterointerfaces, a Sr-excess is present between the LaAlO and homoepitaxial SrTiO. Furthermore, an increase in the out-of-plane lattice constant is observed in LaAlO, indicating that the conductivity both with and without insertion of SrTiO thin film originates from a Zener breakdown associated with the polar catastrophe. When more than a critical thickness of homoepitaxial SrTiO is inserted between LaAlO and SrTiO, the electrons transferred by the electronic reconstruction are trapped by the formation of a Sr-rich secondary phase and Sr-vacancies. The migration of Sr towards the surface of homoepitaxial STO and accompanying loss of interfacial conductivity can be delayed by reducing the Sr-content in the PLD target.