Source author record

M. Kronseder

M. Kronseder appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con physics.app-ph

Catalog footprint

What is connected

4works

4topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2022arXiv

Phonon-dominated energy transport in purely metallic heterostructures

We use ultrafast x-ray diffraction to quantify the transport of energy in laser-excited nanoscale Au/Ni bilayers. Electron transport and efficient electron-phonon coupling in Ni convert the laser-deposited energy in the conduction electrons within a few picoseconds into a strong non-equilibrium between hot Ni and cold Au phonons at the bilayer interface. Modeling of the subsequent equilibration dynamics within various two-temperature models confirms that for ultrathin Au films the thermal transport is dominated by phonons instead of conduction electrons because of the weak electron-phonon coupling in Au.

preprint2021arXiv

Transport properties of band engineered p-n heterostructures of epitaxial Bi$_2$Se$_3$/(Bi$_{1-x}$Sb$_x$)$_2$(Te$_{1-y}$Se$_y$)$_3$ topological insulators

The challenge of parasitic bulk doping in Bi-based 3D topological insulator materials is still omnipresent, especially when preparing samples by molecular beam epitaxy (MBE). Here, we present a heterostructure approach for epitaxial BSTS growth. A thin n-type Bi$_2$Se$_3$ (BS) layer is used as an epitaxial and electrostatic seed which drastically improves the crystalline and electronic quality and reproducibility of the sample properties. In heterostructures of BS with p-type (Bi$_{1-x}$Sb$_x$)$_2$(Te$_{1-y}$Se$_y$)$_3$ (BSTS) we demonstrate intrinsic band bending effects to tune the electronic properties solely by adjusting the thickness of the respective layer. The analysis of weak anti-localization features in the magnetoconductance indicates a separation of top and bottom conduction layers with increasing BSTS thickness. By temperature- and gate-dependent transport measurements, we show that the thin BS seed layer can be completely depleted within the heterostructure and demonstrate electrostatic tuning of the bands via a back-gate throughout the whole sample thickness.

preprint2020arXiv

Observation of anomalously strong penetration of terahertz electric field through terahertz-opaque gold films into a GaAs/AlGaAs quantum well

We observe an anomalously high electric field of terahertz (THz) radiation acting on a two-dimensional electron gas (2DEG) placed beneath a thin gold film, which, however, is supposed to be opaque at THz frequencies. We show that the anomalously strong penetration of the THz electric field through a very high conductive gold film emerges if two conditions are fulfilled simultaneously: (i) the film's thickness is less than the skin depth and (ii) the THz electric field is measured beneath the film at distances substantially smaller than the radiation wavelength. We demonstrate that under these conditions the strength of the field acting on a 2DEG is almost the same as it would be in the absence of the gold film. The effect is detected for macroscopically homogeneous perforation-free gold films illuminated by THz-laser radiation with a spot smaller than the film area. This eliminates the near-field of the edge diffraction as a possible cause of the anomalous penetration. The microscopic origin of the effect remains unexplained in its details, yet. The observed effect can be used for the development of THz devices based on two-dimensional materials requiring robust highly conducting top gates placed at less than nanometer distance from the electron gas location.

preprint2015arXiv

Co-sputtered MoRe thin films for carbon nanotube growth-compatible superconducting coplanar resonators

Molybdenum rhenium alloy thin films can exhibit superconductivity up to critical temperatures of $T_c=15\mathrm{K}$. At the same time, the films are highly stable in the high-temperature methane / hydrogen atmosphere typically required to grow single wall carbon nanotubes. We characterize molybdenum rhenium alloy films deposited via simultaneous sputtering from two sources, with respect to their composition as function of sputter parameters and their electronic dc as well as GHz properties at low temperature. Specific emphasis is placed on the effect of the carbon nanotube growth conditions on the film. Superconducting coplanar waveguide resonators are defined lithographically; we demonstrate that the resonators remain functional when undergoing nanotube growth conditions, and characterize their properties as function of temperature. This paves the way for ultra-clean nanotube devices grown in situ onto superconducting coplanar waveguide circuit elements.