Researcher profile

M. Kotrla

M. Kotrla contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.dis-nn cond-mat.stat-mech

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preprint2012arXiv

Multiscale modeling of submonolayer growth for Fe/Mo(110)

We use a multiscale approach to study a lattice-gas model of submonolayer growth of Fe/Mo(110) by Molecular Beam Epitaxy. To begin with, we construct a two-dimensional lattice-gas model of the Fe/Mo(110) system based on first-principles calculations of the monomer diffusion barrier and adatom-adatom interactions. The model is investigated by equilibrium Monte Carlo (MC) simulations to compute the diffusion coefficients of Fe islands of different sizes. These quantities are then used as input to the coarse-grained Kinetic Rate Equation (KRE) approach, which provides time evolution of the island size distributions for a system undergoing diffusion driven aggregation within the 2D submonolayer regime. We calculate these distributions at temperatures T=500 K and 1000 K using the KRE method. We also employ direct kinetic MC simulations of our model to study island growth at T=500 K, and find good agreement with the KRE results, which validates our multi-scale approach.

preprint1999arXiv

Energy barriers for diffusion on stepped Rh(111) surfaces

Energy barriers for different moves of a single Rh adatom in the vicinity of steps on Rh(111) surface are studied with molecular statics. Interatomic interactions are modeled by the semi-empirical many-body Rosato-Guillope-Legrand potential. We calculate systematically barriers for the descent at straight steps, steps with the kink and small islands as well as barriers for diffusion along the step edges. The descent is more probable on steps with a {111} microfacet and near kinks. Diffusion along a step with a {100} microfacet is faster than along a step with a {111} microfacet. We also calculate barriers for diffusion on several surfaces vicinal to Rh(111).

preprint1997arXiv

Weak pinning: Surface growth in presence of a defect

We study the influence of a point defect on the profile of a growing surface in the single-step growth model. We employ the mapping to the asymmetric exclusion model with blockage, and using Bethe-Ansatz eigenfunctions as a starting approximation we are able to solve this problem analytically in two-particle sector. The dip caused by the defect is computed. A simple renormalization group-like argument enables to study scaling of the dip with increasing length of the sample L; the RG mapping is calculated approximately using the analytical results for small samples. For a horizontal surface we found that the surface is only weakly pinned at the inhomogeneity; the dip scales as a power law L^γwith γ= 0.58496. The value of the exponent agrees with direct numerical simulations of the inhomogeneous single-step growth model. In the case of tilted surfaces we observe a phase transition between weak and strong pinning and the exponent in the weak pinning regime depends on the tilt.