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Source author record

M. Hugues

M. Hugues appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2019arXiv

Optical spin locking of a solid-state qubit

Quantum control of solid-state spin qubits typically involves pulses in the microwave domain, drawing from the well-developed toolbox of magnetic resonance spectroscopy. Driving a solid-state spin by optical means offers a high-speed alternative, which in the presence of limited spin coherence makes it the preferred approach for high-fidelity quantum control. Bringing the full versatility of magnetic spin resonance to the optical domain requires full phase and amplitude control of the optical fields. Here, we imprint a programmable microwave sequence onto a laser field and perform electron spin resonance in a semiconductor quantum dot via a two-photon Raman process. We show that this approach yields full SU(2) spin control with over 98% pi-rotation fidelity. We then demonstrate its versatility by implementing a particular multi-axis control sequence, known as spin locking. Combined with electron-nuclear Hartmann-Hahn resonances which we also report in this work, this sequence will enable efficient coherent transfer of a quantum state from the electron spin to the mesoscopic nuclear ensemble.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

From the artificial atom to the Kondo-Anderson model: orientation dependent magneto-photoluminescence of charged excitons in InAs quantum dots

We present a magneto-photoluminescence study on neutral and charged excitons confined to InAs/GaAs quantum dots. Our investigation relies on a confocal microscope that allows arbitrary tuning of the angle between the applied magnetic field and the sample growth axis. First, from experiments on neutral excitons and trions, we extract the in-plane and on-axis components of the Landé tensor for electrons and holes in the s-shell. Then, based on the doubly negatively charged exciton magneto-photoluminescence we show that the p-electron wave function spreads significantly into the GaAs barriers. We also demonstrate that the p-electron g-factor depends on the presence of a hole in the s-shell. The magnetic field dependence of triply negatively charged excitons photoluminescence exhibits several anticrossings, as a result of coupling between the quantum dot electronic states and the wetting layer. Finally, we discuss how the system evolves from a Kondo-Anderson exciton description to the artificial atom model when the orientation of the magnetic field goes from Faraday to Voigt geometry.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Strain evolution in GaN Nanowires: from free-surface objects to coalesced templates

Top-down fabricated GaN nanowires, 250 nm in diameter and with various heights, have been used to experimentally determine the evolution of strain along the vertical direction of 1-dimensional objects. X-ray diffraction and photoluminescence techniques have been used to obtain the strain profile inside the nanowires from their base to their top facet for both initial compressive and tensile strains. The relaxation behaviors derived from optical and structural characterizations perfectly match the numerical results of calculations based on a continuous media approach. By monitoring the elastic relaxation enabled by the lateral free-surfaces, the height from which the nanowires can be considered strain-free has been estimated. Based on this result, NWs sufficiently high to be strain-free have been coalesced to form a continuous GaN layer. X-ray diffraction, photoluminescence and cathodoluminescence clearly show that despite the initial strain-free nanowires template, the final GaN layer is strained.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Microcavity quantum-dot systems for non-equilibrium Bose-Einstein condensation

We review the practical conditions required to achieve a non-equilibrium BEC driven by quantum dynamics in a system comprising a microcavity field mode and a distribution of localised two-level systems driven to a step-like population inversion profile. A candidate system based on eight 3.8nm layers of In(0.23)Ga(0.77)As in GaAs shows promising characteristics with regard to the total dipole strength which can be coupled to the field mode.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Quantum state preparation in semiconductor dots by adiabatic rapid passage

Preparation of a specific quantum state is a required step for a variety of proposed practical uses of quantum dynamics. We report an experimental demonstration of optical quantum state preparation in a semiconductor quantum dot with electrical readout, which contrasts with earlier work based on Rabi flopping in that the method is robust with respect to variation in the optical coupling. We use adiabatic rapid passage, which is capable of inverting single dots to a specified upper level. We demonstrate that when the pulse power exceeds a threshold for inversion, the final state is independent of power. This provides a new tool for preparing quantum states in semiconductor dots and has a wide range of potential uses.

0 citations0 reviewsNo code linkedOpen access