Researcher profile

M. Hatefipour

M. Hatefipour contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Detecting induced $p \pm ip$ pairing at the Al-InAs interface with a quantum microwave circuit

Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a strong fingerprint from the two-component nature of the hybrid system, and quantitatively compare with a theory that includes the contribution of intraband $p \pm i p$ pairing in the InAs, as well as the emergence of Bogoliubov-Fermi surfaces due to magnetic field. Separately resolving the Al and InAs contributions allows us to determine the carrier density and mobility in the InAs.

preprint2020arXiv

Tailoring Superconducting Phases Observed in Hyperdoped Si:Ga for Cryogenic Circuit Applications

Hyperdoping with gallium (Ga) has been established as a route to observe superconductivity in silicon (Si). The relatively large critical temperatures (T$_{\rm c}$) and magnetic fields (B$_{\rm c}$) make this phase attractive for cryogenic circuit applications, particularly for scalable hybrid superconductor--semiconductor platforms. However, the robustness of Si:Ga superconductivity at millikelvin temperatures is yet to be evaluated. Here, we report the presence of a reentrant resistive transition below T$_{\rm c}$ for Si:Ga whose strength strongly depends on the distribution of the Ga clusters that precipitate in the implanted Si after annealing. By monitoring the reentrant resistance over a wide parameter space of implantation energies and fluences, we determine conditions that significantly improve the coherent coupling of Ga clusters, therefore, eliminating the reentrant transition even at temperatures as low as 20~mK.