Microscopic control of Si nuclear spins near phosphorus donors in silicon
We demonstrate an efficient control of Si nuclear spin orientation for specific lattice sites near P donors in silicon crystals at temperatures below 1 K and in high magnetic field of 4.6 T. Excitation of the forbidden electron-nuclear transitions leads to a pattern of narrow holes and peaks in the ESR lines of P. The pattern originates from dynamic polarization the Si nuclear spins near the donors via the solid effect. This method can be used for initialization of qubits based on Si nuclear spins in the all-silicon quantum computer. In comparison, polarization of Si performed by pumping the allowed ESR transitions, did not create any patterns. Instead, a single narrow spectral hole was burnt in the ESR line. The difference is explained by a rapid spin diffusion during the microwave pumping of the allowed transitions.