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M. Guevara-Bertsch

M. Guevara-Bertsch appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2020arXiv

Multi-GHz repetition rate, multi-watt average power, ultraviolet laser pulses for fast trapped-ion entanglement operations

The conventional approach to perform two-qubit gate operations in trapped ions relies on exciting the ions on motional sidebands with laser light, which is an inherently slow process. One way to implement a fast entangling gate protocol requires a suitable pulsed laser to increase the gate speed by orders of magnitude. However, the realization of such a fast entangling gate operation presents a big technical challenge, as such the required laser source is not available off-the-shelf. For this, we have engineered an ultrafast entangling gate source based on a frequency comb. The source generates bursts of several hundred mode-locked pulses with pulse energy $\sim$800 pJ at 5 GHz repetition rate at 393.3 nm and complies with all requirements for implementing a fast two-qubit gate operation. Using a single, chirped ultraviolet pulse, we demonstrate a rapid adiabatic passage in a Ca$^+$ ion. To verify the applicability and projected performance of the laser system for inducing entangling gates we run simulations based on our source parameters. The gate time can be faster than a trap period with an error approaching $10^{-4}$.

preprint2015arXiv

Detection of the adsorption of water monolayers through the ion oscillation frequency in the magnesium oxide lattice by means of Low Energy Electron Diffraction

We investigate the variation of the oscillation frequency of the Mg$^{2+}$ and O$^{2-}$ ions in the magnesium oxide lattice due to the interactions of the surface with water monolayers by means of Low Energy Electron Diffraction. Our key result is a new technique to determine the adsorbate vibrations produced by the water monolayers on the surface lattice as a consequence of their change in the surface Debye temperature and its chemical shift. The latter was systematically investigated for different annealing times and for a constant external thermal perturbation in the range of 110-300 K in order to accomplish adsorption or desorption of water monolayers in the surface lattice.