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Researcher profile

M. Gamino

M. Gamino contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.soft

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Published work

2 published item(s)

preprint2022arXiv

Fundamental inequalities in the Stoner-Wohlfarth model

We report two fundamental inequalities in the Stoner-Wohlfarth model. Specifically, we investigate the theoretical limit for the initial magnetic susceptibility in a system described by the Stoner-Wohlfarth approach. We also find analytical solutions for the magnetization in the low-field regime and obtain the borderline value for the uniaxial anisotropy constant in such an ideal Stoner-Wohlfarth system. We go beyond and introduce a general mean-field theory for interacting Stoner-Wohlfarth-like systems, thus estimating how the initial magnetic susceptibility is affected by the dipolar and exchange interactions inside the system. By means of a simple insight from a fundamental inequality for the magnetic susceptibility of an ideal Stoner-Wohlfarth system, we show its violation is a signature of the existence of exchange interactions between nanoparticles in an interacting Stoner-Wohlfarth-like system.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Unveiling the polarity of the spin-to-charge current conversion in $Bi_2Se_3$

We report an investigation of the spin- to charge-current conversion in sputter-deposited films of topological insulator $Bi_2Se_{3}$ onto single crystalline layers of YIG $(Y_{3}Fe_{5}O_{12})$ and polycrystalline films of Permalloy $(Py = Ni_{81}Fe_{19})$. Pure spin current was injected into the $Bi_{2}Se_{3}$ layer by means of the spin pumping process in which the spin precession is obtained by exciting the ferromagnetic resonance of the ferromagnetic film. The spin-current to charge-current conversion, occurring at the $Bi_{2}Se_{3}/$ferromagnet interface, was attribute to the inverse Rashba-Edelstein effect (IREE). By analyzing the data as a function of the $Bi_{2}Se_{3}$ thickness we calculated the IREE length used to characterize the efficiency of the conversion process and found that 1.2 pm $\leq|λ_{IREE}|\leq$ 2.2 pm. These results support the fact that the surface states of $Bi_{2}Se_{3}$ have a dominant role in the spin-charge conversion process, and the mechanism based on the spin diffusion process plays a secondary role. We also discovered that the spin- to charge-current mechanism in $Bi_{2}Se_{3}$ has the same polarity as the one in Ta, which is the opposite to the one in Pt. The combination of the magnetic properties of YIG and Py, with strong spin-orbit coupling and dissipationless surface states topologically protected of $Bi_{2}Se_{3}$ might lead to spintronic devices with fast and efficient spin-charge conversion.

0 citations0 reviewsNo code linkedOpen access