Researcher profile

M. G. Stachiotti

M. G. Stachiotti contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2014arXiv

Phase Transitions and Antiferroelectrivity in BiFeO3 from Atomic Level Simulations

The structural and polar properties of BiFeO3 at finite temperature are investigated using an atomistic shell model fitted to first-principles calculations. Molecular Dynamics simulations show a direct transition from the low-temperature R3c ferroelectric phase to the Pbnm orthorhombic phase without evidence of any intermediate bridging phase between them. The high-temperature phase is characterized by the presence of two sublattices with opposite polarizations, and it displays the characteristic double-hysteresis loop under the action of an external electric field. The microscopic analysis reveals that the change in the polar direction and the large lattice strains observed during the antiferroelectric-ferroelectric phase transition originate from the interplay between polarization, oxygen octahedron rotations and strain. As a result, the induced ferroelectric phase recovers the symmetry of the low temperature R3c phase.

preprint2012arXiv

Multiferroic behavior of Aurivillius Bi4Mn3O12 from first-principles

The multiferroic behavior of the hypothetical Aurivillius compound Bi4Mn3O12 has been explored on the basis of density functional calculations. We find that the tetragonal paraelectric phase of this material is ferromagnetic, showing ferroelectric and antiferrodistortive instabilities similar to the ones observed in its ferroelectric parent compound Bi4Ti3O12 . Our results indicate, however, that the presence of Mn+4 ions at the B-sites shrinks the cell volume and consequently the unstable polar mode, associated with the ferroelectric polarization, is overcame by an antiferrodistortive distortion. In this way, Bi4Mn3O12 exhibits incipient ferroelectricity at its equilibrium volume. We show that the ferroelectric state can be favored by strain or partial substitution of Mn with Ti.

preprint2011arXiv

Relative phase stability and lattice dynamics of NaNbO$_3$ from first-principles calculations

We report total energy calculations for different crystal structures of NaNbO$_3$ over a range of unit cell volumes using the all-electron full-potential (L)APW method. We employed both the local-density approximation (LDA) and the Wu-Cohen form of the generalized gradient approximation (GGA-WC) to test the accuracy of these functionals for the description of the complex structural behavior of NaNbO$_3$. We found that LDA not only underestimates the equilibrium volume of the system but also predicts an incorrect ground state for this oxide. The GGA-WC functional, on the other hand, significantly improves the equilibrium volume and provides relative phase stability in better agreement with experiments. We then use the GGA-WC functional for the calculation of the phonon dispersion curves of cubic NaNbO$_3$ to identify the presence of structural instabilities in the whole Brillouin zone. Finally, we report comparative calculations of structural instabilities as a function of volume in NaNbO$_3$ and KNbO$_3$ to provide insights for the understanding of the structural behavior of K$_{1-x}$Na$_x$NbO$_3$ solid solutions.

preprint2011arXiv

Toroidal ferroelectricity in PbTiO3 nanoparticles

We report from first-principles-based atomistic simulations that ferroelectricity can be sustained in PbTiO3 nanoparticles of only a few lattice constants in size as a result of a toroidal ordering. We found that size-induced topological transformations lead to the stabilization of a ferroelectric bubble by the alignment of vortex cores along a closed path. These transformations, which are driven by the aspect ratio of the nanostructure, change the topology of the polarization field, producing a rich variety of polar configurations. For sufficiently flat nanostructures, a multi-bubble state bridges the gap between 0D nanodots and 2D ultra-thin films. The thermal properties of the ferroelectric bubbles indicate that this state is suitable for the development of nanometric devices.