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M. Freitag

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cond-mat.mes-hall cond-mat.mtrl-sci astro-ph.GA

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preprint2010arXiv

The Impact of Stellar Collisions in the Galactic Center

We consider whether stellar collisions can explain the observed depletion of red giants in the Galactic center. We model the stellar population with two different IMFs: 1) the Miller-Scalo and 2) a much flatter IMF. In the former case, low-mass main-sequence stars dominate the population, and collisions are unable to remove red giants out to 0.4 pc although brighter red giants much closer in may be depleted via collisions with stellar-mass black holes. For a much flatter IMF, the stellar population is dominated by compact remnants (i.e. black holes, white dwarfs and neutron stars). The most common collisions are then those between main-sequence stars and compact remnants. Such encounters are likely to destroy the main-sequence stars and thus prevent their evolution into red giants. In this way, the red-giant population could be depleted out to 0.4 pc matching observations. If this is the case, it implies the Galactic center contains a much larger population of stellar-mass black holes than would be expected from a regular IMF. This may in turn have implications for the formation and growth of the central supermassive black hole.

preprint2009arXiv

The role of contacts in graphene transistors: A scanning photocurrent study

A near-field scanning optical microscope is used to locally induce photocurrent in a graphene transistor with high spatial resolution. By analyzing the spatially resolved photo-response, we find that in the n-type conduction regime a p-n-p structure forms along the graphene device due to the doping of the graphene by the metal contacts. The modification of the electronic structure is not limited only underneath the metal electrodes, but extends 0.2-0.3 um into the graphene channel. The asymmetric conduction behavior of electrons and holes that is commonly observed in graphene transistors is discussed in light of the potential profiles obtained from this photocurrent imaging approach. Furthermore, we show that photocurrent imaging can be used to probe single- / multi-layer graphene interfaces.

preprint2002arXiv

Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors

We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by cobalt electrodes. Scanning gate microscopy reveals that the bulk response of these devices is similar to gold-contacted p-CNFETs, confirming that Schottky barrier formation at the contact interface determines accessibility of electron and hole transport regimes. The transfer characteristics and Coulomb Blockade (CB) spectroscopy in ambipolar devices show strongly enhanced gate coupling, most likely due to reduction of defect density at the silicon/silicon-dioxide interface during hydrogen anneal. The CB data in the ``on''-state indicates that these CNFETs are nearly ballistic conductors at high electrostatic doping. Due to their nanoscale capacitance, CNFETs are extremely sensitive to presence of individual charge around the channel. We demonstrate that this property can be harnessed to construct data storage elements that operate at the few-electron level.

preprint2000arXiv

Local electronic properties of single wall nanotube circuits measured by conducting-tip AFM

We use conducting-tip atomic force microscopy (AFM) to measure local electronic properties of single wall carbon nanotube (SWNT) circuits on insulating substrates. When a voltage is applied to the tip and AFM feedback is used to position the tip, images formed from the tip-sample tunnel current have single tube resolution (near 1 nm diameter), more than an order of magnitude better than simultaneously acquired topographic AFM images. By finding points where the tip-sample current is zero, it is possible to measure the electrochemical potential within the circuit, again with nanometer resolution. Such measurements provide compelling evidence that nanotubes within a bundle have only weak electronic coupling. Finally the AFM tip is used as a local electrostatic gate, and the gating action can be correlated with the structure of the SWNT bundle sample. This technique should be useful for a broad range of circuits containing SWNTs and other molecules.