Researcher profile

M. Fornari

M. Fornari contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2016arXiv

High Throughput combinatorial method for fast and robust prediction of lattice thermal conductivity

The lack of computationally inexpensive and accurate ab-initio based methodologies to predict lattice thermal conductivity, without computing the anharmonic force constants or time-consuming ab-initio molecular dynamics, is one of the obstacles preventing the accelerated discovery of new high or low thermal conductivity materials. The Slack equation is the best alternative to other more expensive methodologies but is highly dependent on two variables: the acoustic Debye temperature, $θ_a$, and the Grüneisen parameter, $γ$. Furthermore, different definitions can be used for these two quantities depending on the model or approximation. In this article, we present a combinatorial approach to elucidate which definitions of both variables produce the best predictions of the lattice thermal conductivity, $κ_l$. A set of 42 compounds was used to test accuracy and robustness of all possible combinations. This approach is ideal for obtaining more accurate values than fast screening models based on the Debye model, while being significantly less expensive than methodologies that solve the Boltzmann transport equation.

preprint1999arXiv

Floating bonds and gap states in a-Si and a-Si:H from first principles calculations

We study in detail by means of ab-initio pseudopotential calculations the electronic structure of five-fold coordinated (T_5) defects in a-Si and a-Si:H, also during their formation and their evolution upon hydrogenation. The atom-projected densities of states (DOS) and an accurate analysis of the valence charge distribution clearly indicate the fundamental contribution of T_5 defects in originating gap states through their nearest neighbors. The interaction with hydrogen can reduce the DOS in the gap annihilating T_5 defects.