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Researcher profile

M. Fonin

M. Fonin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

6 published item(s)

preprint2012arXiv

Electronic structure, imaging contrast and chemical reactivity of graphene moiré on metals

Realization of graphene moiré superstructures on the surface of 4d and 5d transition metals offers templates with periodically modulated electron density, which is responsible for a number of fascinating effects, including the formation of quantum dots and the site selective adsorption of organic molecules or metal clusters on graphene. Here, applying the combination of scanning probe microscopy/spectroscopy and the density functional theory calculations, we gain a profound insight into the electronic and topographic contributions to the imaging contrast of the epitaxial graphene/Ir(111) system. We show directly that in STM imaging the electronic contribution is prevailing compared to the topographic one. In the force microscopy and spectroscopy experiments we observe a variation of the interaction strength between the tip and high-symmetry places within the graphene moiré supercell, which determine the adsorption cites for molecules or metal clusters on graphene/Ir(111).

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Graphene on Rh(111): STM and AFM studies

The electronic and crystallographic structure of the graphene/Rh(111) moiré lattice is studied via combination of density-functional theory calculations and scanning tunneling and atomic force microscopy (STM and AFM). Whereas the principal contrast between hills and valleys observed in STM does not depend on the sign of applied bias voltage, the contrast in atomically resolved AFM images strongly depends on the frequency shift of the oscillating AFM tip. The obtained results demonstrate the perspectives of application atomic force microscopy/spectroscopy for the probing of the chemical contrast at the surface.

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preprint2011arXiv

Towards an ideal graphene-based spin-filter

The Fe$_3$O$_4$(111)/graphene/Ni(111) trilayer is proposed to be used as an ideal spin-filtering sandwich where the half-metallic properties of magnetite are used. Thin magnetite layers on graphene/Ni(111) were prepared via successive oxidation of thin iron layer predeposited on graphene/Ni(111) and formed system was investigated by means of low-energy electron diffraction (LEED) and photoelectron spectroscopy (PES) of core levels as well as valence band. The electronic structure and structural quality of the graphene film sandwiched between two ferromagnetic layers remains unchanged upon magnetite formation as confirmed by LEED and PES data.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spatial corrugation and bonding of single layer graphene on Rh(111)

Topographic scanning tunneling microscopy (STM) images of epitaxial single layer graphene on the Rh(111) surface reveal that extended single crystalline graphene domains are produced without any defects on a large scale. High resolution imaging shows that the moiré structure resulting from the lattice mismatch between the Rh(111) substrate and graphene is highly corrugated, containing regions of an additional spatial modulation in the moiré supercell compared with those previously reported for graphene on Ir(111) or graphene on Ru(0001). These areas, which correspond to the "bridge" regions of the moiré structure appear as depressions in STM images indicating a strong orbital hybridization between the graphene layer and the metallic substrate. Valence-band photoemission confirms the strong hybridization between graphene and Rh(111) which leads to the pronounced corrugation of the graphene layer. Our findings underline the importance of considering substrate effects in epitaxially grown graphene layers for the design of graphene-based nanoscale systems.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Rashba effect in the graphene/Ni(111) system

Here, we report on angle-resolved photoemission studies of the electronic $π$ states of high-quality epitaxial graphene layer on a Ni(111) surface. In this system electron binding energy of the $π$ states shows a strong dependence on the magnetization reversal of the Ni film. The observed extraordinary large energy shift up to 225 meV of the graphene-derived $π$-band peak position for opposite magnetization directions is attributed to a manifestation of the Rashba interaction of spin-polarized electrons in the $π$ band with the large effective electric field at graphene/Ni interface. Our findings show that an electron spin in the graphene layer can be manipulated in a controlled way and have important implications for graphene-based spintronic devices.

0 citations0 reviewsNo code linkedOpen access