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Researcher profile

M. F. Thorpe

M. F. Thorpe contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.dis-nncond-mat.mtrl-scicond-mat.stat-mechcond-mat.mes-hallcond-mat.soft

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Published work

5 published item(s)

preprint2015arXiv

Rigidity Loss in Disordered Systems: Three Scenarios

We reveal significant qualitative differences in the rigidity transition of three types of disordered network materials: randomly diluted spring networks, jammed sphere packings, and stress-relieved networks that are diluted using a protocol that avoids the appearance of floppy regions. The marginal state of jammed and stress-relieved networks are globally isostatic, while marginal randomly diluted networks show both overconstrained and underconstrained regions. When a single bond is added to or removed from these isostatic systems, jammed networks become globally overconstrained or floppy, whereas the effect on stress-relieved networks is more local and limited. These differences are also reflected in the linear elastic properties and point to the highly effective and unusual role of global self-organization in jammed sphere packings.

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preprint2013arXiv

Modeling vitreous silica bilayers

We computer model a free-standing vitreous silica bilayer which has recently been synthesized and characterized experimentally in landmark work. Here we model the bilayer using a computer assembly procedure that starts from a single layer of amorphous graphene, generated using a bond switching algorithm from an initially crystalline graphene structure. Next each bond is decorated with an oxygen atom and the carbon atoms are relabeled as silicon. This monolayer can be now thought of as a two dimensional network of corner sharing triangles. Next each triangle is made into a tetrahedron, by raising the silicon atom above each triangle and adding an additional singly coordinated oxygen atom at the apex. The final step is to mirror reflect this layer to form a second layer and then attach the two layers together to form the bilayer. We show that this vitreous silica bilayer has the additional macroscopic degrees of freedom to easily form a network of identical corner sharing tetrahedra if there is a symmetry plane through the center of the bilayer going through the layer of oxygen ions that join the upper and lower layers. This has the consequence that the upper rings lie exactly above the lower rings, which are tilted in general. The assumption of a network of perfect corner sharing tetrahedra leads to a range of possible densities that we have previously characterized in three dimensional zeolites as a flexibility window. Finally, using a realistic potential, we have relaxed the bilayer to determine the density, and other structural characteristics such as the Si-Si pair distribution functions and the Si-O-Si bond angle distribution, which are compared to the experimental results obtained by direct imaging.

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preprint2013arXiv

Universal Behavior for Bond Percolation

We collect together results for bond percolation on various lattices from two to fourteen dimensions which, in the limit of large dimension $d$ or number of neighbors $z$, smoothly approach a randomly diluted Erdős-Rényi graph. We include new results on bond diluted hyper-sphere packs in up to nine dimensions, which show the mean coordination, excess kurtosis and skewness evolving smoothly with dimension towards the Erdős-Rényi limit.

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preprint2012arXiv

Insulating Behavior of an Amorphous Graphene Membrane

We investigate the charge transport properties of planar amorphous graphene that is fully topologically disordered, in the form of sp2 three-fold coordinated networks consisting of hexagonal rings, but also including many pentagons and heptagons distributed in a random fashion. Using the Kubo transport methodology and the Lanczos method, the density of states, mean free paths and semiclassical conductivities of such amorphous graphene membranes are computed. Despite a large increase in the density of states close to the charge neutrality point, all electronic properties are dramatically degraded, evidencing an Anderson insulating state caused by topological disorder alone. These results are supported by Landauer-Buttiker conductance calculations, which show a localization length as short as 5 nanometers

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preprint1999arXiv

High real-space resolution measurement of the local structure of Ga_1-xIn_xAs using x-ray diffraction

High real-space resolution atomic pair distribution functions (PDF)s from the alloy series Ga_1-xIn_xAs have been obtained using high-energy x-ray diffraction. The first peak in the PDF is resolved as a doublet due to the presence of two nearest neighbor bond lengths, Ga-As and In-As, as previously observed using XAFS. The widths of nearest, and higher, neighbor pairs are analyzed by separating the strain broadening from the thermal motion. The strain broadening is five times larger for distant atomic neighbors as compared to nearest neighbors. The results are in agreement with model calculations.

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