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Researcher profile

M. E. Cifuentes-Quintal

M. E. Cifuentes-Quintal contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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3 published item(s)

preprint2022arXiv

Understanding the $sp$ magnetism in substitutional doped graphene

Defect-induced magnetism in graphene has been predicted theoretically and observed experimentally. However, there are open questions about the origin of the magnetic behavior when substitutional impurities with $sp$ electrons are considered. The aim of this work is to contribute to the understanding of impurity-induced spin magnetism in doped graphene systems. Thus, the electronic structure and spin magnetic moments for substitutional doped graphene with impurities from groups IIIA (B, Al, and Ga) and VA (N, P, As, Sb, and Bi) of the periodic table were obtained within the framework of density functional theory. The nature of the magnetic ground state was determined from calculations of the total energy as a function of the spin magnetic moment using the fixed spin moment method. We show that the spontaneous magnetization in the studied systems arises from an electronic instability by the presence of a narrow impurity band at the Fermi level. Furthermore, we found that the emergence of spin polarization requires the impurity to introduce an extra electron to the graphene lattice and that the impurity-carbon hybridization is close to the $sp^3$ geometry. These features reveal that the charge doping sign and the hybridization degree play a fundamental role in the origin of $sp$ magnetism in substitutional doped graphene.

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preprint2020arXiv

Effects of biaxial strain on the impurity-induced magnetism in P-doped graphene and N-doped silicene: A first principles study

The effects of biaxial strain on the impurity-induced magnetism in P-doped graphene (P-graphene) and N-doped silicene (N-silicene) are studied by means of spin-polarized density functional calculations, using the supercell approach. The calculations were performed for three different supercell sizes $4\times 4$, $5\times 5$, and $6\times 6$, in order to simulate three different dopant concentrations 3.1, 2.0 and 1.4 %, respectively. For both systems, the calculated magnetic moment is 1.0 $μ_B$ per impurity atom for the three studied concentrations. From the analysis of the electronic structure and the total energy as a function of the magnetization, we show that a Stoner-type model describing the electronic instability of the narrow impurity band accounts for the origin of $sp$-magnetism in P-graphene and N-silicene. Under biaxial strain the impurity band dispersion increases and the magnetic moment gradually decreases, with the consequent collapse of the magnetization at moderate strain values. Thus, we found that biaxial strain induces a magnetic quantum phase transition in P-graphene and N-silicene.

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preprint2015arXiv

Landau Levels in Uniaxially Strained Graphene: A Geometrical Approach

The effect of strain on the Landau levels (LLs) spectra in graphene is studied, using an effective Dirac-like Hamiltonian which includes the distortion in the Dirac cones, anisotropy and spatial-dependence of the Fermi velocity induced by the lattice change through a renormalized linear momentum. We propose a geometrical approach to obtain the electron's wave-function and the LLs in graphene from the Sturm-Liouville theory, using the minimal substitution method. The coefficients of the renormalized linear momentum are fitted to the energy bands, which are obtained from a Density Functional Theory (DFT) calculation. In particular, we evaluate the case of Dirac cones with an ellipsoidal transversal section resulting from uniaxially strained graphene along armchair (AC) and zig-zag (ZZ) directions. We found that uniaxial strain in graphene induces a contraction of the LLs spectra for both strain directions. Also, is evaluated the contribution of the tilting of Dirac cone axis resulting from the uniaxial deformations to the contraction of the LLs spectra.

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