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M. Dragoman

M. Dragoman appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2012arXiv

Extending ballistic graphene FET lumped element models to diffusive devices

In this work, a modified, lumped element graphene field effect device model is presented. The model is based on the "Top-of-the-barrier" approach which is usually valid only for ballistic graphene nanotransistors. Proper modifications are introduced to extend the model's validity so that it accurately describes both ballistic and diffusive graphene devices. The model is compared to data already presented in the literature. It is shown that a good agreement is obtained for both nano-sized and large area graphene based channels. Accurate prediction of drain current and transconductance for both cases is obtained.

preprint2012arXiv

Graphene-like metallic-on-silicon field effect transistor

In this manuscript, we present a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that the two-dimensional electron gas channel is modulated by the gate voltage. The dependence of the drain current on the drain voltage has no saturation region, similar to a field effect transistor based on graphene. However, the transport in this transistor is not ambipolar, as in graphene, but unipolar.

preprint2009arXiv

Writing Electronic Devices on Paper with Carbon Nanotube Ink

The normal paper used in any printer is among the cheapest flexible organic materials that exist. We demonstrate that we can print on paper high-frequency circuits tunable with an applied dc voltage. This is possible with the help of an ink containing functionalized carbon nanotubes and water. After the water is evaporated from the paper, the nanotubes remain steadily imprinted on paper, showing a semiconducting behaviour and tunable electrical properties.