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M. Deutsch

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Published work

3 published item(s)

preprint2016arXiv

Magnetic ground state and spin fluctuations in MnGe chiral magnet as studied by Muon Spin Rotation

We have studied by muon spin resonance (μSR) the helical ground state and fluctuating chiral phase recently observed in the MnGe chiral magnet. At low temperature, the muon polarization shows double period oscillations at short time scales. Their analysis, akin to that recently developed for MnSi [A. Amato et al., Phys. Rev. B 89, 184425 (2014)], provides an estimation of the field distribution induced by the Mn helical order at the muon site. The refined muon position agrees nicely with ab initio calculations. With increasing temperature, an inhomogeneous fluctuating chiral phase sets in, characterized by two well separated frequency ranges which coexist in the sample. Rapid and slow fluctuations, respectively associated with short range and long range ordered helices, coexist in a large temperature range below T$_{N}$ = 170 K. We discuss the results with respect to MnSi, taking the short helical period, metastable quenched state and peculiar band structure of MnGe into account.

preprint2016arXiv

Magnetovolume effect, macroscopic hysteresis and moment collapse in the paramagnetic state of cubic MnGe under pressure

Itinerant magnets generally exhibit pressure induced transitions towards non magnetic states. Using synchrotron based X-ray diffraction and emission spectroscopy, the evolution of the lattice and spin moment in the chiral magnet MnGe was investigated in the paramagnetic state and under pressures up to 38 GPa. The collapse of spin-moment takes place in two steps. A first-order transition with a huge hysteresis around 7 GPa transforms the system from the high-spin at ambient pressure to a low-spin state. The coexistence of spin-states and observation of history-depending irreversibility is explained as effect of long-range elastic strains mediated by magnetovolume coupling. Only in a second transition, at about 23 GPa, the spin-moment collapses.

preprint2004arXiv

Effect of electrical bias on spin transport across a magnetic domain wall

We present a theory of the current-voltage characteristics of a magnetic domain wall between two highly spin-polarized materials, which takes into account the effect of the electrical bias on the spin-flip probability of an electron crossing the wall. We show that increasing the voltage reduces the spin-flip rate, and is therefore equivalent to reducing the width of the domain wall. As an application, we show that this effect widens the temperature window in which the operation of a unipolar spin diode is nearly ideal.