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Researcher profile

M. Czapkiewicz

M. Czapkiewicz contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2014arXiv

Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

In order to characterize magnetic-field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the cyclotron resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with the THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

The photoresponse of a two-dimensional electron gas at the second harmonic of the cyclotron resonance

Terahertz spectroscopy experiments at magnetic fields and low temperatures were carried out on samples of different gate shapes processed on a high electron mobility GaAs/AlGaAs heterostructure. For a given radiation frequency, multiple magnetoplasmon resonances were observed with a dispersion relation described within a local approximation of the magnetoconductivity tensor. The second harmonic of the cyclotron resonance was observed and its appearance was interpreted as resulting from a high frequency, inhomogeneous electromagnetic field on the border of a two-dimensional electron gas with a metallic gate and/or an ohmic contact.

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preprint2013arXiv

Nonlocal resistance and its fluctuations in microstructures of band-inverted HgTe/(Hg,Cd)Te quantum wells

We investigate experimentally transport in gated microsctructures containing a band-inverted HgTe/Hg_{0.3}Cd_{0.7}Te quantum well. Measurements of nonlocal resistances using many contacts prove that in the depletion regime the current is carried by the edge channels, as expected for a two-dimensional topological insulator. However, high and non-quantized values of channel resistances show that the topological protection length (i.e. the distance on which the carriers in helical edge channels propagate without backscattering) is much shorter than the channel length, which is ~100 micrometers. The weak temperature dependence of the resistance and the presence of temperature dependent reproducible quasi-periodic resistance fluctuations can be qualitatively explained by the presence of charge puddles in the well, to which the electrons from the edge channels are tunnel-coupled.

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preprint2012arXiv

Evidence for Charging Effects in CdTe/CdMgTe Quantum Point Contacts

Here we report on fabrication and low temperature magnetotransport measurements of quantum point contacts patterned from a novel two-dimensional electron system - CdTe/CdMgTe modulation doped heterostructure. From the temperature and bias dependence we ascribe the reported data to evidence for a weakly bound state which is naturally formed inside a CdTe quantum constrictions due to charging effects. We argue that the spontaneous introduction of an open dot is responsible for the replacement of flat conductance plateaus by quasi-periodic resonances with amplitude less than 2e^{2}/h, as found in our system. Additionally, below 1 K a pattern of weaker conductance peaks, superimposed upon wider resonances, is also observed.

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preprint2009arXiv

Quantum effects in linear and non-linear transport of T-shaped ballistic junction

We report low-temperature transport measurements of three-terminal T-shaped device patterned from GaAs/AlGaAs heterostructure. We demonstrate the mode branching and bend resistance effects predicted by numerical modeling for linear conductance data. We show also that the backscattering at the junction area depends on the wave function parity. We find evidence that in a non-linear transport regime the voltage of floating electrode always increases as a function of push-pull polarization. Such anomalous effect occurs for the symmetric device, provided the applied voltage is less than the Fermi energy in equilibrium.

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