Researcher profile

M. Creff

M. Creff contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Screening effect in Spin-Hall Devices

The stationary state of the spin-Hall bar is studied in the framework of a variational approach that includes non-equilibrium screening effects. The minimization of the power dissipated in the system is performed with taking into account the spin-flip relaxation and the global constrains due to the electric generator and global charge conservation. The calculation is performed in both approximations of negligible spin-flip scattering and strong spin-flip scattering. In both cases, the expressions of the spin-accumulation and the longitudinal and transverse pure spin-currents are derived analytically. Due to the small value of the Debye-Fermi screening length, the spin-accumulation is shown to be linear in $y$ (across the device), linear in the electric field imposed by the generator, and inversely proportional to the temperature for non-degenerate conductors.

preprint2019arXiv

Surface currents in Hall devices

A variational approach is used in order to study the stationary states of Hall devices. Charge accumulation, electric potentials and electric currents are investigated on the basis of the Kirchhoff-Helmholtz principle of least heat dissipation. A simple expression for the state of minimum power dissipated -- that corresponds to zero transverse current and harmonic chemical potential -- is derived. It is shown that a longitudinal surface current proportional to the charge accumulation is flowing near the edges of the device. Charge accumulation and surface currents define a boundary layer over a distance of the order of the Debye-Fermi length.