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M. C. Cassidy

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cond-mat.mes-hall cond-mat.mtrl-sci physics.med-ph quant-ph cond-mat.supr-con physics.app-ph

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preprint2020arXiv

Transparent Gatable Superconducting Shadow Junctions

Gate tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probes to voltage-controlled qubit operations in gatemon and topological qubits. Common to all is that junction transparency plays a critical role. In this study, we grow single crystalline InAs, InSb and $\mathrm{InAs_{1-x}Sb_x}$ nanowires with epitaxial superconductors and in-situ shadowed junctions in a single-step molecular beam epitaxy process. We investigate correlations between fabrication parameters, junction morphologies, and electronic transport properties of the junctions and show that the examined in-situ shadowed junctions are of significantly higher quality than the etched junctions. By varying the edge sharpness of the shadow junctions we show that the sharpest edges yield the highest junction transparency for all three examined semiconductors. Further, critical supercurrent measurements reveal an extraordinarily high $I_\mathrm{C} R_\mathrm{N}$, close to the KO$-$2 limit. This study demonstrates a promising engineering path towards reliable gate-tunable superconducting qubits.

preprint2019arXiv

Autonomous tuning and charge state detection of gate defined quantum dots

Defining quantum dots in semiconductor based heterostructures is an essential step in initializing solid-state qubits. With growing device complexity and increasing number of functional devices required for measurements, a manual approach to finding suitable gate voltages to confine electrons electrostatically is impractical. Here, we implement a two-stage device characterization and dot-tuning process which first determines whether devices are functional and then attempts to tune the functional devices to the single or double quantum dot regime. We show that automating well established manual tuning procedures and replacing the experimenter's decisions by supervised machine learning is sufficient to tune double quantum dots in multiple devices without pre-measured input or manual intervention. The quality of measurement results and charge states are assessed by four binary classifiers trained with experimental data, reflecting real device behaviour. We compare and optimize eight models and different data preprocessing techniques for each of the classifiers to achieve reliable autonomous tuning, an essential step towards scalable quantum systems in quantum dot based qubit architectures.

preprint2013arXiv

In-vivo magnetic resonance imaging of hyperpolarized silicon particles

Silicon-based micro and nanoparticles have gained popularity in a wide range of biomedical applications due to their biocompatibility and biodegradability in-vivo, as well as a flexible surface chemistry, which allows drug loading, functionalization and targeting. Here we report direct in-vivo imaging of hyperpolarized 29Si nuclei in silicon microparticles by MRI. Natural physical properties of silicon provide surface electronic states for dynamic nuclear polarization (DNP), extremely long depolarization times, insensitivity to the in-vivo environment or particle tumbling, and surfaces favorable for functionalization. Potential applications to gastrointestinal, intravascular, and tumor perfusion imaging at sub-picomolar concentrations are presented. These results demonstrate a new background-free imaging modality applicable to a range of inexpensive, readily available, and biocompatible Si particles.

preprint2012arXiv

Radical-free dynamic nuclear polarization using electronic defects in silicon

Direct dynamic nuclear polarization of 1H nuclei in frozen water and water-ethanol mixtures is demonstrated using silicon nanoparticles as the polarizing agent. Electron spins at dangling-bond sites near the silicon surface are identified as the source of the nuclear hyperpolarization. This novel polarization method open new avenues for the fabrication of surface engineered nanostructures to create high nuclear-spin polarized solutions without introducing contaminating radicals, and for the study of molecules adsorbed onto surfaces.

preprint2011arXiv

Decay of nuclear hyperpolarization in silicon microparticles

We investigate the low-field relaxation of nuclear hyperpolarization in undoped and highly doped silicon microparticles at room temperature following removal from high field. For nominally undoped particles, two relaxation time scales are identified for ambient fields above 0.2 mT. The slower, T_1s, is roughly independent of ambient field; the faster, T_1f, decreases with increasing ambient field. A model in which nuclear spin relaxation occurs at the particle surface via a two-electron mechanism is shown to be in good agreement with the experimental data, particularly the field-independence of T_1s. For boron-doped particles, a single relaxation time scale is observed. This suggests that for doped particles, mobile carriers and bulk ionized acceptor sites, rather than paramagnetic surface states, are the dominant relaxation mechanisms. Relaxation times for the undoped particles are not affected by tumbling in a liquid solution.

preprint2009arXiv

Single Shot Charge Detection Using A Radio-Frequency Quantum Point Contact

We report on charge sensing measurements of a GaAs semiconductor quantum dot device using a radio frequency quantum point contact (rf-QPC). The rf-QPC is fully characterized at 4 K and milli-Kelvin temperatures and found to have a bandwidth exceeding 20 MHz. For single-shot charge sensing we achieve a charge sensitivity of 2x10^-4 e/(sqrt)Hz referred to the neighboring dot's charge. The rf-QPC compares favorably with rf-SET electrometers and promises to be an extremely useful tool for characterizing and measuring semiconductor quantum systems on fast timescales.