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M. Bachmann

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2019arXiv

Probing intraband excitations in ZrTe$_5$: a high-pressure infrared and transport study

Zirconium pentatetelluride, ZrTe5, shows remarkable sensitivity to hydrostatic pressure. In this work we address the high-pressure transport and optical properties of this compound, on samples grown by flux and charge vapor transport. The high-pressure resistivity is measured up to 2 GPa, and the infrared transmission up to 9 GPa. The dc conductivity anisotropy is determined using a microstructured sample. Together, the transport and optical measurements allow us to discern band parameters with and without the hydrostatic pressure, in particular the Fermi level, and the effective mass in the less conducting, out-of-plane direction. The results are interpreted within a simple two-band model characterized by a Dirac-like, linear in-plane band dispersion, and a parabolic out-of-plane dispersion.

preprint2011arXiv

Atomistic Green's Function Method supported by ab initio Calculations : Application to phonon transport in ZnO and ZnS

We present an approach to calculate ballistic phonon transport that combines the atomistic Green's function (AGF) method with ab initio results. For the inter atomic potential we use the harmonic approach. The equilibrium positions of the atoms and the inter atomic force constants(ifcs) are calculated using the ABINIT program package, which is based on density functional theory. Therefore, the presented approach is parameter free. From the Green's function of the system we determine the density of states as well as the transmission function. The thermal conductance is obtained within the linear response regime. We apply this approach to bulk ZnO and bulk ZnS. Transmission functions for different transport direction for each material are presented. A comparison of the transmission function shows, that a ZnO/ZnS interface could be a promising phonon blocker. Adding such interfaces in ZnO or ZnS based thermoelectric devices could therefore increase the figure of merit.