Researcher profile

M. Alvaro

M. Alvaro contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2014arXiv

Dynamics of optically injected currents in carbon nanotubes

We consider theoretically the dynamics of electric currents optically injected in carbon nanotubes. Although the plasma oscillations are not seen in these systems, the main effect on the carrier's motion is due to strongly nonuniform space-charge Coulomb forces produced by time-dependent separation of injected electron and hole densities. We calculate evolution of the dipole moment characterizing the time- and coordinate-dependent charge density distributions and analyze different regimes of the dynamics. The developed time-dependent dipole moment leads to a dipole radiation in the THz frequency range for typical parameters of injected currents.

preprint2014arXiv

Hybrid modeling of tumor-induced angiogenesis

When modeling of tumor-driven angiogenesis, a major source of analytical and computational complexity is the strong coupling between the kinetic parameters of the relevant stochastic branching-and-growth of the capillary network, and the family of interacting underlying fields. To reduce this complexity, we take advantage of the system intrinsic multiscale structure: we describe the stochastic dynamics of the cells at the vessel tip at their natural mesoscale, whereas we describe the deterministic dynamics of the underlying fields at a larger macroscale. Here, we set up a conceptual stochastic model including branching, elongation, and anastomosis of vessels and derive a mean field approximation for their densities. This leads to a deterministic integro-partial differential system that describes the formation of the stochastic vessel network. We discuss the proper capillary injecting boundary conditions and include the results of relevant numerical simulations.

preprint2014arXiv

Noise enhanced spontaneous chaos in semiconductor superlattices at room temperature

Physical systems exhibiting fast spontaneous chaotic oscillations are used to generate high-quality true random sequences in random number generators. The concept of using fast practical entropy sources to produce true random sequences is crucial to make storage and transfer of data more secure at very high speeds. While the first high-speed devices were chaotic semiconductor lasers, the discovery of spontaneous chaos in semiconductor superlattices at room temperature provides a valuable nanotechnology alternative. Spontaneous chaos was observed in 1996 experiments at temperatures below liquid nitrogen. Here we show spontaneous chaos at room temperature appears in idealized superlattices for voltage ranges where sharp transitions between different oscillation modes occur. Internal and external noises broaden these voltage ranges and enhance the sensitivity to initial conditions in the superlattice snail-shaped chaotic attractor thereby rendering spontaneous chaos more robust.

preprint2010arXiv

Two mini-band model for self-sustained oscillations of the current through resonant tunneling semiconductor superlattices

A two miniband model for electron transport in semiconductor superlattices that includes scattering and interminiband tunnelling is proposed. The model is formulated in terms of Wigner functions in a basis spanned by Pauli matrices, includes electron-electron scattering in the Hartree approximation and modified Bhatnagar-Gross-Krook collision tems. For strong applied fields, balance equations for the electric field and the miniband populations are derived using a Chapman-Enskog perturbation technique. These equations are then solved numerically for a dc voltage biased superlattice. Results include self-sustained current oscillations due to repeated nucleation of electric field pulses at the injecting contact region and their motion towards the collector. Numerical reconstruction of the Wigner functions shows that the miniband with higher energy is empty during most of the oscillation period: it becomes populated only when the local electric field (corresponding to the passing pulse) is sufficiently large to trigger resonant tunneling.