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M. A. Jafari

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Published work

2 published item(s)

preprint2022arXiv

Electronic and magnetic properties of silicene monolayer under bi-axial mechanical strain: a first-principles study

Mechanical control of electronic and magnetic properties of 2D Van-der-Waals heterostructures gives new possibilities for further development of spintronics and information-related technologies. Using the density functional theory, we investigate the structural, electronic, and magnetic properties of silicene monolayer with substituted Chromium atoms and under a small biaxial strain ($-6\%< ε< 8\%$). Our results indicate that the Cr-doped silicene nanosheets without strain have magnetic metallic, half-metallic or semiconducting properties depending on the type of substitution. We also show that the magnetic moments associated with the monomer and vertical dimer substitutions change very weakly with strain. However, the magnetic moment associated with the horizontal dimer substitution decreases when either compressive or tensile strain is applied to the system. Additionally, we show that the largest semiconductor band-gap is approximately 0.13 eV under zero strain for the vertical Cr-doped silicene. Finally, biaxial compressive strain leads to irregular changes in the magnetic moment for Cr vertical dimer substitution.

preprint2022arXiv

Spin valve effect in two-dimensional VSe$_2$ system

Vanadium based dichalcogenides, VSe$_2$, are two-dimensional materials in which magnetic Vanadium atoms are arranged in a hexagonal lattice and are coupled ferromagnetically within the plane. However, adjacent atomic planes are coupled antiferromagnetically. This provides new and interesting opportunities for application in spintronics and data storage and processing technologies. A spin valve magnetoresistance may be achieved when magnetic moments of both atomic planes are driven to parallel alignment by an external magnetic field. The resistance change associated with the transition from antiparallel to the parallel configuration is qualitatively similar to that observed in artificially layered metallic magnetic structures. Detailed electronic structure of VSe$_2$ was obtained from DFT calculations. Then, the ballistic spin-valve magnetoresistance was determined within the Landauer formalism. In addition, we also analyze thermal and thermoelectric properties. Both phases of VSe$_2$, denoted as H and T, are considered.