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Researcher profile

Luis M. Canonico

Luis M. Canonico contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.dis-nncond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2025arXiv

Real-Time Out-of-Equilibrium Quantum Dynamics in Disordered Materials

We report a linear-scaling numerical method for exploring nonequilibrium electron dynamics in systems of arbitrary complexity. Based on the Chebyshev expansion of the time evolution of the single-particle density matrix, the method gives access to nonperturbative excitation and relaxation phenomena in models of disordered materials with sizes on the experimental scale. After validating the method by applying it to saturable optical absorption in clean graphene, we uncover that disorder can enhance absorption in graphene and that the interplay between light, anisotropy, and disorder in nanoporous graphene might be appealing for sensing applications. Beyond the optical properties of graphene-like materials, the method can be applied to a wide range of large-area materials and systems with arbitrary descriptions of defects and disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Generation and control of non-local chiral currents in graphene superlattices by orbital Hall effect

Graphene-based superlattices offer a new materials playground to exploit and control a higher number of electronic degrees of freedom, such as charge, spin, or valley for disruptive technologies. Recently, orbital effects, emerging in multivalley band structure lacking inversion symmetry, have been discussed as possible mechanisms for developing orbitronics. Here, we report non-local transport measurements in small gap hBN/graphene/hBN moiré superlattices which reveal very strong magnetic field-induced chiral response which is stable up to room temperature. The measured sign dependence of the non-local signal with respect to the magnetic field orientation clearly indicates the manifestation of emerging orbital magnetic moments. The interpretation of experimental data is well supported by numerical simulations, and the reported phenomenon stands as a formidable way of in-situ manipulation of the transverse flow of orbital information, that could enable the design of orbitronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Disentangling orbital and valley Hall effects in bilayers of transition metal dichalcogenides

It has been recently shown that monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase exhibit relatively large orbital Hall conductivity plateaus within their energy band gaps, where their spin Hall conductivities vanish. However, since the valley Hall effect (VHE) in these systems also generates a transverse flow of orbital angular momentum it becomes experimentally challenging to distinguish between the two effects in these materials. The VHE requires inversion symmetry breaking to occur, which takes place in the TMD monolayers, but not in the bilayers. We show that a bilayer of 2H-MoS$_2$ is an orbital Hall insulator that exhibits a sizeable OHE in the absence of both spin and valley Hall effects. This phase can be characterised by an orbital Chern number that assumes the value $\mathcal{C}_{L}=2$ for the 2H-MoS$_2$ bilayer and $\mathcal{C}_{L}=1$ for the monolayer, confirming the topological nature of these orbital-Hall insulator systems. Our results are based on density functional theory (DFT) and low-energy effective model calculations and strongly suggest that bilayers of TMDs are highly suitable platforms for direct observation of the orbital Hall insulating phase in two-dimensional materials. Implications of our findings for attempts to observe the VHE in TMD bilayers are also discussed.

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preprint2020arXiv

Orbital Hall Insulating Phase in Transition Metal Dichalcogenide Monolayers

We show that H-phase transition metal dichalcogenides (TMDs) monolayers such as MoS$_2$ and WSe$_2$, are orbital Hall insulators. They present very large orbital Hall conductivity plateaus in their semiconducting gap, where the spin Hall conductivity vanishes. Our results open the possibility of using TMDs for orbital current injection and orbital torque transfers that surpass their spin-counterparts in spin-orbitronics devices. The orbital Hall effect (OHE) in TMD monolayers occurs even in the absence of spin-orbit coupling. It can be linked to exotic momentum-space Dresselhaus-like orbital textures, analogous to the spin-momentum locking in 2D Dirac fermions that arise from a combination of orbital attributes and lattice symmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Two-dimensional orbital Hall insulators

The orbital-Hall effect (OHE), similarly to the spin-Hall effect (SHE), refers to the creation of a transverse flow of orbital angular momentum that is induced by a longitudinally applied electric field. For systems in which the spin-orbit coupling (SOC) is sizeable, the orbital and spin angular momentum degrees of freedom are coupled, and an interrelationship between charge, spin and orbital angular momentum excitations is naturally established. The OHE has been explored mostly in metallic systems, where it can be quite strong. However, several of its features remain unexplored in two-dimensional (2D) materials. Here, we investigate the role of orbital textures for the OHE displayed by multi-orbital 2D materials. We predict the appearance of a rather large orbital Hall effect in these systems both in their metallic and insulating phases. In some cases, the orbital Hall currents are larger than the spin Hall ones, and their use as information carriers widens the development possibilities of novel spin-orbitronic devices.

0 citations0 reviewsNo code linkedOpen access