Researcher profile

Luis E. F. Foa Torres

Luis E. F. Foa Torres contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2022arXiv

Copropagating edge states produced by the interaction between electrons and chiral phonons in two-dimensional materials

Unlike the chirality of electrons, the intrinsic chirality of phonons has only surfaced in recent years. Here we report on the effects of the interaction between electrons and chiral phonons in two-dimensional materials by using a non-perturbative solution. We show that chiral phonons introduce inelastic \textit{Umklapp} processes resulting in copropagating edge states which coexist with a continuum. Transport simulations further reveal the robustness of the edge states. Our results hint on the possibility of having a metal embedded with hybrid electron-phonon states of matter.

preprint2022arXiv

Robustness of spin-polarized edge states in a two-dimensional topological semimetal without inversion symmetry

Three-dimensional topological gapless phases have attracted significant attention due to their unique electronic properties. A flagship example are Weyl semimetals, which require breaking time-reversal or inversion symmetry. In two dimensions, the dimensionality reduction requires imposing an additional symmetry, thereby weakening the phase. Like its three-dimensional counterpart, these two-dimensional Weyl semimetals present edge states directly related to Weyl nodes. The direct comparison with the edge states in zigzag-like terminated graphene ribbons is unavoidable, offering the question of how robust these states are and their differences. Here we benchmark the robustness of the edge states in two-dimensional Weyl semimetals without inversion symmetry with those present in zigzag graphene ribbons. Our results show that, despite having a similar electronic band structure, the edge states of two-dimensional Weyl semimetal are more robust against vacancies than graphene ribbons. We attribute this enhanced robustness to a crucial role of the spin degree of freedom in the former case

preprint2020arXiv

Floquet boundary states in AB-stacked graphite

We report on the effect of laser illumination with circularly polarized light on the electronic structure of AB-stacked graphite samples. By using Floquet theory in combination with Green's function techniques, we find that the polarized light induces band-gap openings at the Floquet zone edge $\hbarΩ/2$, bridged by chiral boundary states. These states propagate mainly along the borders of the constituting layers as evidenced by the time-averaged local density of states and the probability current density in several geometries. Semianalytic calculations of the Chern number suggest that these states are of topological nature, similar to those found in illuminated 2D samples like monolayer and bilayer graphene. These states are promising candidates for the realization of a three-dimensional version of the quantum Hall effect for Floquet systems.

preprint2013arXiv

Non-perturbative laser effects on the electrical properties of graphene nanoribbons

The use of Floquet theory combined with a realistic description of the electronic structure of illuminated graphene and graphene nanoribbons is developed to assess the emergence of non-adiabatic and non-perturbative effects on the electronic properties. Here, we introduce an efficient computational scheme and illustrate its use by applying it to graphene nanoribbons in the presence of both linear and circular polarization. The interplay between confinement due to the finite sample size and laser-induced transitions is shown to lead to sharp features on the average conductance and density of states. Particular emphasis is given to the emergence of the bulk limit response.

preprint2012arXiv

Laser-induced effects on the electronic features of graphene nanoribbons

We study the interplay between lateral confinement and photon-induced processes on the electronic properties of illuminated graphene nanoribbons. We find that by tuning the device setup (edges geometries, ribbon width and polarization direction), a laser with frequency Ω may either not affect the electronic structure, or induce bandgaps or depletions at \hbar Ω/2, and/or at other energies not commensurate with half the photon energy. Similar features are also observed in the dc conductance, suggesting the use of the polarization direction to switch on and off the graphene device. Our results could guide the design of novel types of optoelectronic nano-devices.

preprint2011arXiv

Tuning laser-induced bandgaps in graphene

Could a laser field lead to the much sought-after tunable bandgaps in graphene? By using Floquet theory combined with Green's functions techniques, we predict that a laser field in the mid-infrared range can produce observable bandgaps in the electronic structure of graphene. Furthermore, we show how they can be tuned by using the laser polarization. Our results could serve as a guidance to design opto-electronic nano-devices.

preprint2009arXiv

AC transport in graphene-based Fabry-Perot devices

We report on a theoretical study of the effects of time-dependent fields on electronic transport through graphene nanoribbon devices. The Fabry-Pérot interference pattern is modified by an ac gating in a way that depends strongly on the shape of the graphene edges. While for armchair edges the patterns are found to be regular and can be controlled very efficiently by tuning the ac field, samples with zigzag edges exhibit a much more complex interference pattern due to their peculiar electronic structure. These studies highlight the main role played by geometric details of graphene nanoribbons within the coherent transport regime. We also extend our analysis to noise power response, identifying under which conditions it is possible to minimize the current fluctuations as well as exploring scaling properties of noise with length and width of the systems.