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Lu Xie

Lu Xie appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-sciQuantitative MethodsBiological Physicscond-mat.mes-hallMolecular Networksphysics.app-ph

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Published work

4 published item(s)

preprint2020arXiv

A Study of Selectively Digital Etching Silicon-Germanium with Nitric and Hydrofluoric Acids

A digital etching method was proposed to achieve excellent control of etching depth. The digital etching characteristics of p+ Si and Si0.7Ge0.3 using the combinations of HNO3 oxidation and BOE oxide removal processes were studied. Experiments showed that oxidation saturates with time due to low activation energy. A physical model was presented to describe the wet oxidation process with nitric acid. The model was calibrated with experimental data and the oxidation saturation time, final oxide thickness, and selectivity between Si0.7Ge0.3 and p+ Si were obtained. The digital etch of laminated Si0.7Ge0.3/p+ Si was also investigated. The depth of the tunnels formed by etching SiGe layers between two Si layers was found in proportion to digital etching cycles. And oxidation would also saturate and the saturated relative etched amount per cycle (REPC) was 0.5 nm (4 monolayers). A corrected selectivity calculation formula was presented. The oxidation model was also calibrated with Si0.7Ge0.3/p+ Si stacks, and selectivity from model was the same with the corrected formula. The model can also be used to analyze process variations and repeatability. And it could act as a guidance for experiment design. Selectivity and repeatability should make a trade-off.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Derivative-free optimization of rate parameters of capsid assembly models from bulk in vitro data

The assembly of virus capsids from free coat proteins proceeds by a complicated cascade of association and dissociation steps, the great majority of which cannot be directly experimentally observed. This has made capsid assembly a rich field for computational models to attempt to fill the gaps in what is experimentally observable. Nonetheless, accurate simulation predictions depend on accurate models and there are substantial obstacles to model inference for such systems. Here, we describe progress in learning parameters for capsid assembly systems, particularly kinetic rate constants of coat-coat interactions, by computationally fitting simulations to experimental data. We previously developed an approach to learn rate parameters of coat-coat interactions by minimizing the deviation between real and simulated light scattering data monitoring bulk capsid assembly in vitro. This is a difficult data-fitting problem, however, because of the high computational cost of simulating assembly trajectories, the stochastic noise inherent to the models, and the limited and noisy data available for fitting. Here we show that a newer classes of methods, based on derivative-free optimization (DFO), can more quickly and precisely learn physical parameters from static light scattering data. We further explore how the advantages of the approaches might be affected by alternative data sources through simulation of a model of time-resolved mass spectrometry data, an alternative technology for monitoring bulk capsid assembly that can be expected to provide much richer data. The results show that advances in both the data and the algorithms can improve model inference, with rich data leading to high-quality fits for all methods, but DFO methods showing substantial advantages over less informative data sources better representative of the current experimental practice.

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preprint2012arXiv

Avoid Internal Loops in Steady State Flux Space Sampling

As a widely used method in metabolic network studies, Monte-Carlo sampling in the steady state flux space is known for its flexibility and convenience of carrying out different purposes, simply by alternating constraints or objective functions, or appending post processes. Recently the concept of a non-linear constraint based on the second thermodynamic law, known as "Loop Law", is challenging current sampling algorithms which will inevitably give rise to the internal loops. A generalized method is proposed here to eradicate the probability of the appearance of internal loops during sampling process. Based on Artificial Centered Hit and Run (ACHR) method, each step of the new sampling process will avoid entering "loop-forming" subspaces. This method has been applied on the metabolic network of Helicobacter pylori with three different objective functions: uniform sampling, optimizing biomass synthesis, optimizing biomass synthesis efficiency over resources ingested. Comparison between results from the new method and conventional ACHR method shows effective elimination of loop fluxes without affecting non-loop fluxes.

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preprint2012arXiv

Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides

Motivated by the triumph and limitation of graphene for electronic applications, atomically thin layers of group VI transition metal dichalcogenides are attracting extensive interest as a class of graphene-like semiconductors with a desired band-gap in the visible frequency range. The monolayers feature a valence band spin splitting with opposite sign in the two valleys located at corners of 1st Brillouin zone. This spin-valley coupling, particularly pronounced in tungsten dichalcogenides, can benefit potential spintronics and valleytronics with the important consequences of spin-valley interplay and the suppression of spin and valley relaxations. Here we report the first optical studies of WS2 and WSe2 monolayers and multilayers. The efficiency of second harmonic generation shows a dramatic even-odd oscillation with the number of layers, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer). Photoluminescence (PL) measurements show the crossover from an indirect band gap semiconductor at mutilayers to a direct-gap one at monolayers. The PL spectra and first-principle calculations consistently reveal a spin-valley coupling of 0.4 eV which suppresses interlayer hopping and manifests as a thickness independent splitting pattern at valence band edge near K points. This giant spin-valley coupling, together with the valley dependent physical properties, may lead to rich possibilities for manipulating spin and valley degrees of freedom in these atomically thin 2D materials.

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