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Longtu Li

Longtu Li appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2011arXiv

Controlling the band gap of ZnO by programmable annealing

Annealing has been extensively used to control crystal growth and physical properties of materials with unfortunately unclear mechanism and quantitative correlations. Here we present the "annealing temperature - grain size - band gap" correlation for ZnO nanocrystals with experimental evidence. Findings revealed that the annealing condition determines the critical size by equating the thermal and the cohesive energy of the undercoordinated atoms in the surface skin, which in turn induce local strain and quantum entrapment, perturbing the Hamiltonian and hence the band gap. The formulation provides a general guideline for controlling crystal growth and performance of materials, and makes predictive design and fabrication of functional nanomaterials into reality.

preprint2010arXiv

Negative refraction at deep-ultraviolet frequency in monocrystalline graphite

Negative refraction is such a prominent electromagnetic phenomenon that most researchers believe it can only occur in artificially engineered metamaterials. In this article, we report negative refraction for all incident angles for the first time in a naturally existing material. Using ellipsometry measurement of the equifrequency contour in the deep-ultraviolet frequency region (typically 254 nm), obvious negative refraction was demonstrated in monocrystalline graphite for incident angles ranging from 20o to 70o. This negative refraction is attributed to extremely strong anisotropy in the crystal structure of graphite, which gives the crystal indefinite permeability. This result not only explores a new route to identifying natural negative-index materials, but it also holds promise for the development of an ultraviolet hyperlens, which may lead to a breakthrough in nanolithography, the most critical technology necessary for the next generation of electronics.