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Long Liu

Long Liu contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2019arXiv

BGD-based Adam algorithm for time-domain equalizer in PAM-based optical interconnects

To the best of our knowledge, for the first time, we propose adaptive moment estimation (Adam) algorithm based on batch gradient descent (BGD) to design a time-domain equalizer (TDE) for PAM-based optical interconnects. Adam algorithm has been widely applied in the fields of artificial intelligence. For TDE, BGD-based Adam algorithm can obtain globally optimal tap coefficients without being trapped in locally optimal tap coefficients. Therefore, fast and stable convergence can be achieved by BGD-based Adam algorithm with low mean square error. Meanwhile, BGD-based Adam algorithm is implemented by parallel processing, which is more efficient than conventional serial algorithms, such as least mean square and recursive least square algorithms. The experimental results demonstrate that BGD-based Adam feed-forward equalizer works well in 120-Gbit/s PAM8 optical interconnects. In conclusion, BGD-based Adam algorithm shows great potential for converging the tap coefficients of TDE in future optical interconnects.

preprint2019arXiv

Room temperature 2D ferromagnetism in few-layered 1$T$-CrTe$_{2}$

Spin-related electronics using two dimensional (2D) van der Waals (vdW) materials as a platform are believed to hold great promise for revolutionizing the next generation spintronics. Although many emerging new phenomena have been unravelled in 2D electronic systems with spin long-range orderings, the scarcely reported room temperature magnetic vdW material has thus far hindered the related applications. Here, we show that intrinsic ferromagnetically aligned spin polarization can hold up to 316 K in a metallic phase of 1$T$-CrTe$_{2}$ in the few-layer limit. This room temperature 2D long range spin interaction may be beneficial from an itinerant enhancement. Spin transport measurements indicate an in-plane room temperature negative anisotropic magnetoresistance (AMR) in few-layered CrTe$_{2}$, but a sign change in the AMR at lower temperature, with -0.6$\%$ at 300 K and +5$\%$ at 10 K, respectively. This behavior may originate from the specific spin polarized band structure of CrTe$_{2}$. Our findings provide insights into magnetism in few-layered CrTe$_{2}$, suggesting potential for future room temperature spintronic applications of such 2D vdW magnets.